STW7NA100 STH7NA100FI
N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS
TYPE STW7NA100 STH7NA100FI
s s s s s s
V DSS 1...
STW7NA100 STH7NA100FI
N - CHANNEL ENHANCEMENT MODE POWER MOS
TRANSISTORS
TYPE STW7NA100 STH7NA100FI
s s s s s s
V DSS 1000 V 1000 V
R DS(on) < 1.7 Ω < 1.7 Ω
ID 7A 4.3 A
TYPICAL RDS(on) = 1.45 Ω ± 30V GATE TO SOURCE VOLTAGE RATING 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100oC GATE CHARGE MINIMISED REDUCED THRESHOLD VOLTAGE SPREAD TO-247
3 2 1
3 2 1
APPLICATIONS HIGH CURRENT, HIGH SPEED SWITCHING s SWITCH MODE POWER SUPPLY (SMPS) s DC-AC CONVERTERS FOR WELDING EQUIPMENT AND UNINTERRUPTIBLE POWER SUPPLIES AND MOTOR DRIVE
s
ISOWATT218
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol Parameter Value STW7NA100 V DS VDGR V GS ID ID I DM ( ) P tot V ISO T stg Tj March 1998 Drain-source Voltage (V GS = 0) Drain- gate Voltage (R GS = 20 k Ω ) Gate-source Voltage Drain Current (continuous) at T c = 25 o C Drain Current (continuous) at T c = 100 C Drain Current (pulsed) Total Dissipation at T c = 25 o C Derating Factor Insulation Withstand Voltage (DC) Storage Temperature Max. Operating Junction Temperature
o
Unit
STH7NA100FI V V V 4.3 2.7 28 70 0.56 4000 A A A W W/ o C V
o o
1000 1000 ± 30 7 4.4 28 190 1.52 -65 to 150 150
C C 1/6
() Pulse width limited by safe operating area
STW7NA100-STH7NA100FI
THERMAL DATA
TO-247 R thj-case R thj-amb R thc-sink Tl Thermal Resistance Junction-case Max 0.65 30 0.1 300 ISOWATT218 1.78
o o o
C/W C/W C/W o C
Thermal Resistance Junction-ambient Max Thermal Resistance Case-sink Typ Maximum Lead Temperature For Sol...