BU109 TRANSISTOR Datasheet

BU109 Datasheet PDF, Equivalent


Part Number

BU109

Description

NPN HIGH VOLTAGE SILICON POWER TRANSISTOR

Manufacture

CDIL

Total Page 3 Pages
Datasheet
Download BU109 Datasheet


BU109
Continental Device India Limited
An IS/ISO 9002 and IECQ Certified Manufacturer
NPN HIGH VOLTAGE SILICON POWER TRANSISTOR
IS/ISO 9002
Lic# QSC/L-000019.3
BU109
TO-3
Metal Can Package
HORIZONTAL DEFLECTION OUTPUT STAGE OF TVs and CRTs
ABSOLUTE MAXIMUM RATINGS (Ta=25ºC unless specified otherwise)
DESCRIPTION
SYMBOL
Collector Emitter Voltage
Collector Base Voltage
Emitter Base Voltage
Collector Emitter Voltage (VBE= -1.5V)
Collector Current
Collector Peak Current (Repetitive)
Collector Peak Current (t=10ms)
Base Current
Total Power Dissipation@ Tc<25ºC
Juntion Temperature
Storage Temperature
VCEO
VCBO
VEBO
VCEV
IC
ICM
ICM
IB
Ptot
Tj
Tstg
THERMAL RESISTANCE
Junction to Ambient
Junction to Case
Rth(j-a)
Rth(j-c)
ELECTRICAL CHARACTERISTICS (Ta=25ºC unless specified otherwise)
DESCRIPTION
SYMBOL TEST CONDITION
Collector Cut off Current
Emitter Cut off Current
Collector Emitter Saturation Voltage
Base Emitter Saturation Voltage
Transition Frequency
Turn off Time
ICES
ICES
ICES
IEBO
VCE(Sat) *
VBE(Sat) *
fT
toff
VCE=330V, VBE=0
VCE=200V, VBE=0
VCE=200V, VBE=0
TC=150ºC
VEB=6V, IC=0
IC=5A,IB=0.5A
IC=5A,IB=0.5A
IC=0.5A, VCE=10V
IC=5A, IB end = 0.5A
*Pulse Test: Pulse Duration=300ms, Duty Cycle =1.5%
Continental Device India Limited
Data Sheet
VALUE
150
330
6.0
330
7.0
10.0
15.0
4.0
60
150
-65 To+150
70
2.08
UNITS
V
V
V
V
A
A
A
A
W
ºC
ºC
ºC/W
ºC/W
MIN
MAX
UNITS
5.0 mA
100 µA
1.0 mA
1.0 mA
1.0 V
1.2 V
10 MHz
0.75 us
Page 1 of 3

BU109
BU109
TO-3
Metal Can Package
A
B
D
F
J
2
1
M
TO-3 Metal Can Package
DIM MIN.
A—
B—
C 6.35
D 0.96
E—
F 29.90
G 10.69
H 5.20
J 16.64
K 11.15
L—
M 3.84
MAX.
39.37
22.22
8.50
1.09
1.77
30.40
11.18
5.72
17.15
12.25
26.67
4.19
3
2
1
PIN CONFIGURATION
1. BASE
2. EMITTER
3. COLLECTOR
Packing Detail
PACKAGE
STANDARD PACK
Details
Net Weight/Qty
TO-3
100 pcs/pkt
1.3 kg/100 pcs
INNER CARTON BOX
Size
Qty
12.5" x 8" x 1.8"
0.1K
OUTER CARTON BOX
Size
Qty Gr Wt
17" x 11.5" x 21"
2K 27.5 kgs
Continental Device India Limited
Data Sheet
Page 2 of 3


Features Continental Device India Limited An IS/I SO 9002 and IECQ Certified Manufacturer IS/ISO 9002 Lic# QSC/L-000019.3 NPN HIGH VOLTAGE SILICON POWER TRANSISTOR BU109 TO-3 Metal Can Package HORIZONTA L DEFLECTION OUTPUT STAGE OF TVs and CR Ts ABSOLUTE MAXIMUM RATINGS (Ta=25ºC u nless specified otherwise) DESCRIPTION Collector Emitter Voltage Collector Bas e Voltage Emitter Base Voltage Collecto r Emitter Voltage (VBE= -1.5V) Collecto r Current Collector Peak Current (Repet itive) Collector Peak Current (t=10ms) Base Current Total Power Dissipation@ T c<25ºC Juntion Temperature Storage Tem perature THERMAL RESISTANCE Junction to Ambient Junction to Case SYMBOL VCEO V CBO VEBO VCEV IC ICM ICM IB Ptot Tj Tst g VALUE 150 330 6.0 330 7.0 10.0 15.0 4 .0 60 150 -65 To+150 UNITS V V V V A A A A W ºC ºC Rth(j-a) Rth(j-c) 70 2. 08 ºC/W ºC/W ELECTRICAL CHARACTERIS TICS (Ta=25ºC unless specified otherwi se) DESCRIPTION Collector Cut off Curre nt SYMBOL ICES ICES ICES Emitter Cut off Current Collector Emitter Sat.
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