Transistor
2SC1215
Silicon NPN epitaxial planer type
For high-frequency (VHF band) amplification and oscillation
5.0±0...
Transistor
2SC1215
Silicon
NPN epitaxial planer type
For high-frequency (VHF band) amplification and oscillation
5.0±0.2
Unit: mm 4.0±0.2
5.1±0.2
s Features
q High transition frequency fT.
13.5±0.5
/ s Absolute Maximum Ratings (Ta=25˚C)
Parameter
Symbol
Ratings
Unit
e e) Collector to base voltage
VCBO
30
V
c e. d typ Collector to emitter voltage VCEO
20
V
n d stag tinue Emitter to base voltage
VEBO
2.3±0.2
3
V
le on Collector current
IC
50
mA
a elifecyc , disc Collector power dissipation PC
400
mW
n u ct ped Junction temperature
Tj
150
˚C
rodu d ty Storage temperature
Tstg
–55 ~ +150
˚C
+0.2
0.45 –0.1 1.27
+0.2
0.45 –0.1 1.27
123 2.54±0.15
1:Emitter 2:Collector 3:Base JEDEC:TO–92 EIAJ:SC–43A
te tin s wing foudrisPcontinue Electrical Characteristics (Ta=25˚C)
in n follo ned Parameter
Symbol
Conditions
min
typ
max Unit
a o ludes e, pla Collector to base voltage
VCBO
IC =100µA, IE = 0
30
V
inc typ Emitter to base voltage
VEBO
IE = 10µA, IC = 0
3
V
c tinued ance Forward current transfer ratio
hFE
VCB = 10V, IE = –2mA
25
M is con inten Base to emitter voltage
VBE
VCB = 10V, IE = –2mA
0.72
V
/Dis ma Collector to emitter saturation voltage ce pe, Common emitter reverse transfer capacitance
D tenan ce ty Transition frequency
VCE(sat) Cre fT*
IC = 10mA, IB = 1mA
0.1
V
VCE = 10V, IC = 1mA, f = 10.7MHz
1
1.5
pF
VCB = 10V, IE = –15mA, f = 100MHz 600 1200 1600 MHz
ain nan Power gain M ainte Base time constant
...