2SC1215 Transistor Datasheet

2SC1215 Datasheet PDF, Equivalent


Part Number

2SC1215

Description

Silicon NPN epitaxial planer type Transistor

Manufacture

Panasonic Semiconductor

Total Page 3 Pages
Datasheet
Download 2SC1215 Datasheet


2SC1215
Transistor
2SC1215
Silicon NPN epitaxial planer type
For high-frequency (VHF band) amplification and oscillation
s Features
q High transition frequency fT.
5.0±0.2
Unit: mm
4.0±0.2
s Absolute Maximum Ratings (Ta=25˚C)
Parameter
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Collector current
Collector power dissipation
Junction temperature
Storage temperature
Symbol
VCBO
VCEO
VEBO
IC
PC
Tj
Tstg
Ratings
30
20
3
50
400
150
–55 ~ +150
Unit
V
V
V
mA
mW
˚C
˚C
+0.2
0.45 –0.1
1.27
+0.2
0.45 –0.1
1.27
123
2.54±0.15
1:Emitter
2:Collector
3:Base
JEDEC:TO–92
EIAJ:SC–43A
s Electrical Characteristics (Ta=25˚C)
Parameter
Symbol
Conditions
min typ max Unit
Collector to base voltage
Emitter to base voltage
Forward current transfer ratio
VCBO
VEBO
hFE
IC =100µA, IE = 0
IE = 10µA, IC = 0
VCB = 10V, IE = –2mA
30
3
25
V
V
Base to emitter voltage
VBE VCB = 10V, IE = –2mA
0.72 V
Collector to emitter saturation voltage
Common emitter reverse transfer capacitance
Transition frequency
VCE(sat)
Cre
fT*
IC = 10mA, IB = 1mA
0.1 V
VCE = 10V, IC = 1mA, f = 10.7MHz
1 1.5 pF
VCB = 10V, IE = –15mA, f = 100MHz 600 1200 1600 MHz
Power gain
Base time constant
PG
rbb' · CC
VCB = 10V, IE = –1mA, f = 100MHz
VCB = 10V, IE = –10mA, f = 450kHz
20 dB
25 ps
*fT Rank classification
Rank
T
S
fT(MHz) 600 ~ 1300 900 ~ 1600
1

2SC1215
Transistor
PC — Ta
500
450
400
350
300
250
200
150
100
50
0
0 20 40 60 80 100 120 140 160
Ambient temperature Ta (˚C)
IB — VBE
400
VCE=10V
Ta=25˚C
350
300
250
200
150
100
50
0
0 0.6 1.2 1.8
Base to emitter voltage VBE (V)
hFE — IC
240
VCE=10V
200
160
Ta=75˚C
120 25˚C
80 –25˚C
40
0
0.1 0.3 1 3 10 30 100
Collector current IC (mA)
IC — VCE
24
Ta=25˚C
IB=300µA
20
250µA
16
200µA
12
150µA
8 100µA
4 50µA
0
0 6 12 18
Collector to emitter voltage VCE (V)
IC — VBE
60
25˚C
VCE=10V
50
Ta=75˚C –25˚C
40
30
20
10
0
0 0.4 0.8 1.2 1.6 2.0
Base to emitter voltage VBE (V)
1600
1400
1200
1000
fT — IE
Ta=25˚C
VCE=10V
6V
800
600
400
200
0
– 0.1 – 0.3 –1 –3 –10 –30 –100
Emitter current IE (mA)
2SC1215
IC — IB
24
VCE=10V
Ta=25˚C
20
16
12
8
4
0
0 150 300 450
Base current IB (µA)
VCE(sat) — IC
100 IC/IB=10
30
10
3
1
Ta=75˚C
0.3
25˚C
0.1
–25˚C
0.03
0.01
0.1 0.3 1 3 10 30 100
Collector current IC (mA)
Cre — VCE
2.4
IC=1mA
f=10.7MHz
Ta=25˚C
2.0
1.6
1.2
0.8
0.4
0
0.1 0.3 1 3 10 30 100
Collector to emitter voltage VCE (V)
2


Features Transistor 2SC1215 Silicon NPN epitaxia l planer type For high-frequency (VHF b and) amplification and oscillation Unit : mm 5.0±0.2 4.0±0.2 s Features q H igh transition frequency fT. s Absolut e Maximum Ratings Parameter Collector t o base voltage Collector to emitter vol tage Emitter to base voltage Collector current Collector power dissipation Jun ction temperature Storage temperature S ymbol VCBO VCEO VEBO IC PC Tj Tstg (Ta =25˚C) Ratings 30 20 3 50 400 150 –5 5 ~ +150 Unit V V V mA mW ˚C ˚C 13.5 ±0.5 5.1±0.2 0.45 –0.1 1.27 +0.2 0.45 –0.1 1.27 +0.2 1 2 3 2.3±0 .2 2.54±0.15 1:Emitter 2:Collector 3 :Base JEDEC:TO–92 EIAJ:SC–43A s El ectrical Characteristics Parameter Coll ector to base voltage Emitter to base v oltage Forward current transfer ratio B ase to emitter voltage Collector to emi tter saturation voltage Common emitter reverse transfer capacitance Transition frequency Power gain Base time constan t (Ta=25˚C) Symbol VCBO VEBO hFE VBE VCE(sat) Cre fT* PG rbb' · CC Conditions IC .
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