PJ13007

PJ13007 NPN Epitaxial Silicon Transistor HIGH VOLTAGE SWITCH MODE APPLICATION High Speed Switching Suitable for Swiching Regulator and Motor Control TO-220 ABSOLUTE MAXIMUM RATINGS (Ta= 25 ℃ ) Characteristic Collector Base Voltage Collector Emitter Voltage Emitter Base Voltage Collector Current (DC) Collector Current (Pulse) Base Current Collector Dissipation Junction Temperature Storage Temperature IB Pc Tj Tstg 4 80 150 -65 ~150 A W ℃ ℃ Device PJ13007CZ Operating Temperature -20℃～+85℃ Package TO-220 VEBO Ic Ic 9 8 16 V A A Symbol VCBO VCEO Rating 700 400 Uint V V P in : 1. Base 2. Collector 3. Emitter ORDERING INFORMATION ELECTRICAL CHARACTERISTICS(Ta= 25 ℃ ) Characteristic *Collector Emitter Sustaining Voltage Emitter Cutoff Current *DC Current Gain *Collector Emitter Saturation Voltage Symbol VCEO(SUS) IEBO hFE VCE (sat) Test Condition Ic = 10mA, IB = 0 VEB =9V, Ic=0 VCE =5V, Ic =2A VCE =5V, Ic =5A Ic =2A, IB =0.4A Ic =5A, IB =1A Ic =8A, IB =2A *Base Emitter Saturation Voltage Output Capacitance Current Gain Bandwidth Product Turn On Time Storage Time Fall Time Pulse Test: PW ≤300 μS, Duty Cycle ≤2 % VBE (sat) C OB fT t on ts tf Ic =2A, IB =0.4A Ic =5A, IB =1A VCB =10V, f =0.1MHz VCE =10V, Ic =0.5A VCC =125V, Ic =5A IB1 =IB2 =1A 4 1.6 3 0.7 110 8 5 Min 400 1 60 30 1 2 3 1.2 1.6 V V V V V pF MHz μS μS μS Typ Max Unit V mA 1-2 2002/01.rev.A PJ13007 NPN Epitaxial Silicon Transistor 2-2 2002/01.rev.A ...