PJ13005 NPN Epitaxial Silicon Transistor
HIGH VOLTAGE SWITCH MODE APPLICATION
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High Speed Switching Suitable for Sw...
PJ13005
NPN Epitaxial Silicon
Transistor
HIGH VOLTAGE SWITCH MODE APPLICATION
High Speed Switching Suitable for Switching
Regulator and Motor Control
TO-220
ABSOLUTE MAXIMUM RATINGS (Ta = 25 ℃ )
Characteristic Collector Emitter Voltage(VBE =1.5V) Collector Emitter Voltage(open base) Emitter Base Voltage(open collector) Collector Current (DC) Collector Current (Pulse) Base Current Collector Dissipation Junction Temperature Storage Temperature Ic Ic IB Pc Tj Tstg 3 6 2 75 150 -65 ~150 A A A W ℃ ℃ Device PJ13005CZ Operating Temperature -20℃~+85℃ Package TO-220 VEBO 9 V Symbol VCEV VCEO Rating 700 400 Unit V V
P in : 1. Base 2. Collector 3. Emitter
ORDERING INFORMATION
ELECTRICAL CHARACTERISTICS(Ta = 25 ℃ )
Characteristic *Collector Emitter Sustaining Voltage Emitter Cutoff Current *DC Current Gain *Collector Emitter Saturation Voltage Symbol VCEO(SUS) IEBO hFE VCE (sat) Test Condition Ic = 10mA, IB = 0 VEB =9V, Ic=0 VCE =5V, Ic =1A VCE =5V, Ic =2A Ic =1A, IB =0.2A Ic =2A, IB =0.5A Ic =4A, IB =1A *Base Emitter Saturation Voltage Turn On Time Storage Time Fall Time Pulse Test: PW ≤300 μS, Duty Cycle =1.5 % VBE (sat) t on ts tf Ic =1A, IB =0.2A Ic =2A, IB =0.5A VCC =125V, Ic =2A IB1 =-IB2 =0.4A Min 400 1 10 8 60 40 0.5 0.6 1.0 1.2 1.6 0.8 4 0.9 V V V V V μS μS μS Typ Max Unit V mA
1-2
2002/01.rev.A
PJ13005
NPN Epitaxial Silicon
Transistor
2-2
2002/01.rev.A
...