GM71V65163C

GM71V65163C GM71VS65163CL 4,196,304 WORDS x 16 BIT MOS DYNAMIC RAM Description The GM71V(S)65163C/CL is the new generation dynamic RAM organized 4,196,304 words by 16 bits. The GM71V(S)65163C/CL utilizes advanced CMOS Silicon Gate Process Technology as well as advanced circuit techniques for wide operating margins, both internally and to the system user. System oriented features include single power supply of 3.3V+/-10% tolerance, direct interfacing capability with high performance logic families such as Schottky TTL. The GM71V(S)65163C/CL offers Extended Data Out(EDO) Mode as a high speed access mode. Pin Configuration 50 SOJ / TSOP-II VCC IO0 IO1 IO2 IO3 VCC IO4 IO5 IO6 IO7 NC VCC 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 50 49 48 47 46 45 44 43 42 41 40 39 38 37 36 35 34 33 32 31 30 29 28 27 26 VSS IO15 IO14 IO13 IO12 VSS IO11 IO10 IO9 IO8 NC VSS /LCAS /UCAS /OE NC NC NC A11 A10 A9 A8 A7 A6 VSS Features * 4,196,304 Words x 16 Bit * Extended Data Out (EDO) Mode Capability * Fast Access Time & Cycle Time (Unit: ns) /WE /RAS NC NC NC NC A0 A1 tRAC GM71V(S)65163C/CL-5 GM71V(S)65163C/CL-6 50 60 tAA 25 30 tCAC 13 15 tRC 90 110 tHPC 20 25 A2 A3 A4 A5 VCC m o c . u 4 t e e h s a t a .d w w w Rev 0.1 / Apr’01 *Power dissipation - Active : 540mW/504mW(MAX) - Standby : 1.8 mW ( CMOS level : MAX ) 0.54mW ( L-Version : MAX) *EDO page mode capability *Access time : 50ns/60ns (max) *Refresh cycles - RAS only Refresh 4096 cycles/64 ms (GM71V65163C) 4096...