(GM71VS16163CL / GM71V16163C) 1M x 16-Bit CMOS DRAM
1,048,576 WORDS x 16 BIT CMOS DYNAMIC RAM
GM71V16163C GM71VS16163CL
Description
The GM71V(S)16163C/CL is the new gener...
Description
1,048,576 WORDS x 16 BIT CMOS DYNAMIC RAM
GM71V16163C GM71VS16163CL
Description
The GM71V(S)16163C/CL is the new generation dynamic RAM organized 1,048,576 x 16 bit. GM71V(S)16163C/CL has realized higher density, higher performance and various functions by utilizing advanced CMOS process technology. The GM71V(S)16163C/CL offers Extended Data out(EDO) Mode as a high speed access mode. Multplexed address inputs permit the GM71V(S)16163C/CL to be packaged in standard 400 mil 42pin plastic SOJ, and standard 400mil 44(50)pin plastic TSOP II. The package size provides high system bit densities and is compatible with widely available automated testing and insertion equipment.
Features
* 1,048,576 Words x 16 Bit Organization * Extended Data Out Mode Capability * Single Power Supply (3.3V+/-0.3V) * Fast Access Time & Cycle Time (Unit: ns)
tRAC tCAC tRC
GM71V(S)16163C/CL-5 GM71V(S)16163C/CL-6 GM71V(S)16163C/CL-7 GM71V(S)16163C/CL-8 50 60 70 80 13 15 18 20 84 104 124 144
tHPC
20 25 30 35
Pin Configuration 42 SOJ
VCC I/O0 I/O1 I/O2 I/O3 VCC I/O4 I/O5 I/O6 I/O7 NC NC WE RAS A11 A10 A0 A1 A2 A3 VCC
1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 42 41 40 39 38 37 36 35 34 33 32 31 30 29
* Low Power Active : 396/360/324/288mW (MAX) Standby : 7.2mW (MAX) 0.83mW (L-series : MAX) * RAS Only Refresh, CAS before RAS Refresh, Hidden Refresh Capability * All inputs and outputs TTL Compatible * 4096 Refresh Cycles/64ms * 4096 Refresh Cycles/128ms (L-series) * Self Refresh Operation (L-version) ...
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