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GM71VS65163AL Dataheets PDF



Part Number GM71VS65163AL
Manufacturers Hynix Semiconductor
Logo Hynix Semiconductor
Description (GM71VS65163AL / GM71V65163A) 4M x 16-Bit CMOS DRAM
Datasheet GM71VS65163AL DatasheetGM71VS65163AL Datasheet (PDF)

LG Semicon Co.,Ltd. GM71V65163A GM71VS65163AL 4,196,304 WORDS x 16 BIT CMOS DYNAMIC RAM Description The GM71V(S)65163A/AL is the new generation dynamic RAM organized 4,196,304 words by 16 bits. The GM71V(S)65163A/AL utilizes advanced CMOS Silicon Gate Process Technology as well as advanced circuit techniques for wide operating margins, both internally and to the system user. System oriented features include single power supply of 3.3V+/-10% tolerance, direct interfacing capability with high pe.

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LG Semicon Co.,Ltd. GM71V65163A GM71VS65163AL 4,196,304 WORDS x 16 BIT CMOS DYNAMIC RAM Description The GM71V(S)65163A/AL is the new generation dynamic RAM organized 4,196,304 words by 16 bits. The GM71V(S)65163A/AL utilizes advanced CMOS Silicon Gate Process Technology as well as advanced circuit techniques for wide operating margins, both internally and to the system user. System oriented features include single power supply of 3.3V+/-10% tolerance, direct interfacing capability with high performance logic families such as Schottky TTL. The GM71V(S)65163A/AL offers Extended Data Out(EDO) Mode as a high speed access mode. Pin Configuration 50 SOJ / TSOP ¥± VCC IO0 IO1 IO2 IO3 VCC IO4 IO5 IO6 IO7 NC VCC 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 50 49 48 47 46 45 44 43 42 41 40 39 38 VSS IO15 IO14 IO13 IO12 VSS IO11 IO10 IO9 IO8 NC VSS /LCAS Features * 4,196,304 Words x 16 Bit * Extended Data Out (EDO) Mode Capability * Fast Access Time & Cycle Time (Unit: ns) /WE /RAS NC NC NC NC A0 A1 37 /UCAS 36 35 34 33 32 31 30 29 28 27 26 /OE NC NC NC A11 A10 A9 A8 A7 A6 VSS tRAC GM71V(S)65163A/AL-5 GM71V(S)65163A/AL-6 50 60 tAA 25 30 tCAC 13 15 tRC 90 110 tHPC 20 25 A2 A3 A4 A5 VCC w w w . t a d h s a *Power dissipation - Active : 720mW/648mW(MAX) - Standby : 1.8 mW ( CMOS level : MAX ) 0.54mW ( L-Version : MAX) *EDO page mode capability *Access time : 50ns/60ns (max) *Refresh cycles - RAS only Refresh 4096 cycles/64 §Â (GM71V65163A) 4096 cycles/128§Â (GM71VS65163AL)(L_Version) *CBR & Hidden Refresh 4096 cycles/64 §Â (GM71V65163A) 4096 cycles/128 §Â (GM71VS65163AL)( L-Version ) *4 variations of refresh -RAS-only refresh -CAS-before-RAS refresh -Hidden refresh -Self refresh (L-Version) *Single Power Supply of 3.3V+/-10 % with a built-in VBB generator *Battery Back Up Operation ( L-Version ) (Top View) t e e . u 4 m o c 1 www.DataSheet4U.com LG Semicon Pin Description Pin A0-A11 A0-A11 RAS UCAS,LCAS OE Function Address Inputs Refresh Address Inputs Row Address Strobe Column Address Strobe Output Enable Pin WE I/O0 - I/O15 VCC VSS NC GM71V65163A GM71VS65163AL Function Write Enable Data Input / Output Power (+3.3V) Ground No Connection Ordering Information Type No. GM71V(S)65163A/ALJ-5 GM71V(S)65163A/ALJ-6 GM71V(S)65163A/ALT-5 GM71V(S)65163A/ALT-6 Access Time 50§À 60§À 50§À 60§À Package 400 Mil 50 Pin Plastic SOJ 400 Mil 50 Pin Plastic TSOP II Absolute Maximum Ratings* Symbol TSTG VT VCC IOUT PT Parameter Storage Temperature (Plastic) Voltage on any Pin Relative to VSS Voltage on VCC Relative to VSS Short Circuit Output Current Power Dissipation Rating -55 to 125 -0.5 to VCC + 0.5 (MAX ; 4.6V) -0.5 to 4.6 50 1.0 Unit C V V mA W *Note : Operation at or above Absolute Maximum Ratings can adversely affect device reliability. Recommended DC Operating Conditions (TA = 0 ~ 70C) Symbol VCC VSS VIH VIL TA Parameter Supply Voltage Supply Voltage Input High Voltage Input Low Voltage Ambient Temperature under Bias Mi.


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