MS1281

MS1281 RF & MICROWAVE TRANSISTORS FM BROADCAST APPLICATIONS Features 108 MHz 28 VOLTS GOLD METALLIZATION POUT = 150 WATTS GP = 9.2dB MINIMUM COMMON EMITTER CONFIGURATION DESCRIPTION: The MS1281 is a 28V silicon NPN planar transistor designed primarily for VHF FM broadcast transmitters. Diffused emitter ballast provide infinite VSWR capability under rated operating conditions. ABSOLUTE MAXIMUM RATINGS (Tcase = 25° C) Symbol VCBO VCEO VCES VEBO IC PD Tj T STG Parameter Collector-Base Voltage Collector-Emitter Voltage Collector-Emitter Voltage Emitter-Base Voltage Device Current Power Dissipation Junction Temperature Storage Temperature Value 60 25 60 4.0 16 230 200 -65 to +150 Unit V V V V A W m o c . u 4 Thermal Data t e e h s a t a d . w w w RTH(J-C) MS1281.PDF 5-8-03 °C °C Thermal Resistance Junction-case 0.75 ° C/W Advanced Power Technology reserves the right to change, without notice, the specifications and information contained herein Visit our website at WWW.ADVANCEDPOWER.COM or contact our factory direct. www.DataSheet4U.com MS1281 STATIC ELECTRICAL SPECIFICATIONS (Tcase (Tcase = 25 ° C) Symbol BVCBO BVCES BVCEO BVEBO hFE IC = 100 mA IC = 100 mA IC = 100 mA IE = 20 mA VCE = 5 V Test Conditions Min. IE = 0 mA RBE = 10 Ω IB = 0 mA IC = 0 mA IC = 1 A 60 55 25 4.0 20 Value Typ. ----------- Max. --------150 Unit V V V V --- DYNAMIC Symbol POUT GP η f = 108MHz f = 108MHz f = 108MHz f = 1 MHz Test Conditions Min. PIN = 18W PIN = 18W PIN = 18W ...