PM25RLB120 Datasheet PDF - Mitsubishi Electric Semiconductor

MITSUBISHI PM25RLB120 FLAT-BASE TYPE INSULATED PACKAGE PM25RLB120 FEATURE a) Adopting new ...

MITSUBISHI PM25RLB120 FLAT-BASE TYPE INSULATED PACKAGE PM25RLB120 FEATURE a) Adopting new 5th generation IGBT (CSTBT) chip, which performance is improved by 1µm fine rule process. For example, typical Vce(sat)=1.9V @Tj=125°C b) I adopt the over-temperature conservation by Tj detection of CSTBT chip, and error output is possible from all each conservation upper and lower arm of IPM. c) Current rating of brake part increased. 60% for the current rating of inverter part. 3φ 25A, 1200V Current-sense IGBT type inverter 15A, 1200V Current-sense regenerative brake IGBT Monolithic gate drive & protection logic Detection, protection & status indication circuits for, shortcircuit, over-temperature & under-voltage (P-Fo available from upper arm devices) Acoustic noise-less 3.7kW class inverter application APPLICATION General purpose inverter, servo drives and other motor controls PACKAGE OUTLINES 120 7 19.75 106 66.5 16 2 2 16 2 16 2 Dimensions in mm 4-φ 2.5 3.25 4 4 17.5 25.75 50.75 17.5 1 5 9 13 19 25 2.5 71.5 B U V W 55 5 N P Terminal code 1. 2. 3. 4. 5. 6. 7. 8. 9. 10. VUPC UFO UP VUP1 VVPC VFO VP VVP1 VWPC WFO 11. 12. 13. 14. 15. 16. 17. 18. 19. WP VWP1 VNC VN1 Br UN VN WN Fo 2 -φ 7.5 4 4 5.5 4 4 2.5 19.5 22 7.75 23 4 4 23 4 4 23 4 4 98.25 1.5 1 2-φ2.5 1 0.5 2 10.5 27.5 17 16 8.5 Oct. 2003 MITSUBISHI PM25RLB120 FLAT-BASE TYPE INSULATED PACKAGE INTERNAL FUNCTIONS BLOCK DIAGRAM Br...