Power Rectifiers. MUR820 Datasheet

MUR820 Rectifiers. Datasheet pdf. Equivalent


Part MUR820
Description (MUR805 - MUR860) SWITCHMODE Power Rectifiers
Feature MUR805, MUR810, MUR815, MUR820, MUR840, MUR860 Preferred Devices SWITCHMODE™ Power Rectifiers This .
Manufacture ON Semiconductor
Datasheet
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MUR820
MUR805, MUR810, MUR815,
MUR820, MUR840, MUR860,
MURF860
Preferred Devices
SWITCHMODEt
Power Rectifiers
This series are stateoftheart devices designed for use in
switching power supplies, inverters and as free wheeling diodes.
Features
Ultrafast 25 and 50 Nanosecond Recovery Time
175°C Operating Junction Temperature
Epoxy Meets UL 94 V0 @ 0.125 in
Low Forward Voltage
Low Leakage Current
Reverse Voltage to 600 V
PbFree Packages are Available*
Mechanical Characteristics:
Case: Epoxy, Molded
Weight: 1.9 Grams (Approximately)
Finish: All External Surfaces Corrosion Resistant and Terminal
Leads are Readily Solderable
Lead Temperature for Soldering Purposes: 260°C Max for 10 Seconds
ULTRAFAST RECTIFIERS
8.0 AMPERES, 50600 VOLTS
1
4
3
44
1
3
TO220AC
CASE 221B
PLASTIC
1
3
TO220 FULLPAK
CASE 221E
STYLE 1
MARKING DIAGRAMS
AY WWG
U8xx
KA
AYWWG
MURF860
KA
*For additional information on our PbFree strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
© Semiconductor Components Industries, LLC, 2008
1
A
Y
WW
U8XX
G
KA
= Assembly Location
= Year
= Work Week
= Device Code
xx = 05, 10, 15, 20, 40, or 60
= PbFree Package
= Diode Polarity
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 7 of this data sheet.
Preferred devices are recommended choices for future use
and best overall value.



MUR820
MUR805, MUR810, MUR815, MUR820, MUR840, MUR860, MURF860
MAXIMUM RATINGS
MUR
Rating
Symbol 805 810 815 820 840 860
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
VRRM
VRWM
VR
50 100 150 200 400 600
Average Rectified Forward Current
Total Device, (Rated VR), TC = 150°C
IF(AV)
8.0
Peak Repetitive Forward Current
(Rated VR, Square Wave, 20 kHz), TC = 150°C
IFM 16
Nonrepetitive Peak Surge Current
(Surge applied at rated load conditions halfwave, single phase, 60 Hz)
IFSM
100
Unit
V
A
A
A
Operating Junction Temperature and Storage Temperature Range
TJ, Tstg
65 to +175
°C
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
THERMAL CHARACTERISTICS
Rating
Maximum Thermal Resistance, JunctiontoCase
Thermal Resistance, JunctiontoCase
Thermal Resistance, JunctiontoAmbient
Thermal Resistance, JunctiontoAmbiente
MUR
Symbol 805 810 815 820 840 860 Unit
RqJC
3.0
2.0 °C/W
MURF860 RqJC
4.75 °C/W
RqJA
73 °C/W
MURF860 RqJA
75 °C/W
ELECTRICAL CHARACTERISTICS
Rating
Maximum Instantaneous Forward Voltage (Note 1)
(iF = 8.0 A, TC = 150°C)
(iF = 8.0 A, TC = 25°C)
Maximum Instantaneous Reverse Current (Note 1)
(Rated DC Voltage, TJ = 150°C)
(Rated DC Voltage, TJ = 25°C)
Maximum Reverse Recovery Time
(IF = 1.0 A, di/dt = 50 A/ms)
(IF = 0.5 A, iR = 1.0 A, IREC = 0.25 A)
1. Pulse Test: Pulse Width = 300 ms, Duty Cycle 2.0%.
MUR
Symbol 805 810 815 820 840 860 Unit
vF V
0.895
1.00 1.20
0.975
1.30 1.50
iR
250
5.0
mA
500
10
trr
35
25
ns
60
50
2







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