UPD444016L

DATA SHEET MOS INTEGRATED CIRCUIT µPD444016L 4M-BIT CMOS FAST SRAM 256K-WORD BY 16-BIT Description The µPD444016L is a high speed, low power, 4,194,304 bits (262,144 words by 16 bits) CMOS static RAM. Operating supply voltage is 3.3 V ± 0.3 V. The µPD444016L is packaged in 44-pin plastic SOJ and 44-pin plastic TSOP (II). Features 262,144 words by 16 bits organization Fast access time : 8, 10, 12 ns (MAX.) Byte data control : /LB (I/O1 - I/O8), /UB (I/O9 - I/O16) Output Enable input for easy application Single +3.3 V power supply Ordering Information Part number Package Access time ns (MAX.) Supply current mA (MAX.) At operating 210 190 180 210 190 180 At standby 5 µPD444016LLE-A8 µPD444016LLE-A10 µPD444016LLE-A12 µPD444016LG5-A8-7JF µPD444016LG5-A10-7JF µPD444016LG5-A12-7JF 44-pin plastic SOJ (10.16 mm (400)) 8 10 12 44-pin plastic TSOP (II) (10.16 mm (400)) (Normal bent) 8 10 12 The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. Not all devices/types available in every country. Please check with local NEC representative for availability and additional information. Document No. M14431EJ3V0DS00 (3rd edition) Date Published January 2001 NS CP(K) Printed in Japan The mark shows major revised points. © 1999 µPD444016L Pin Configuration (Marking Side) /××× indicates active low signal. 44-pin plastic SOJ (10.16 mm (400)) [ µPD444016LLE ] 44-pin plastic TSOP (...