DatasheetsPDF.com

UPD444008

4M-BIT CMOS FAST SRAM 512K-WORD BY 8-BIT

Description

DATA SHEET MOS INTEGRATED CIRCUIT µPD444008 4M-BIT CMOS FAST SRAM 512K-WORD BY 8-BIT Description The µPD444008 is a high speed, low power, 4,194,304 bits (524,288 words by 8 bits) CMOS static RAM. Operating supply voltage is 5.0 V ± 0.5 V. The µPD444008 is packaged in 36-pin PLASTIC SOJ. Features 524,288 words by 8 bits organization Fast access time...

NEC

Download UPD444008 Datasheet

Similar Datasheet

UPD444001 4M-BIT CMOS FAST SRAM 4M-WORD BY 1-BIT - NEC
UPD444004 4M-BIT CMOS FAST SRAM 1M-WORD BY 4-BIT - NEC
UPD444004L 4M-BIT CMOS FAST SRAM 1M-WORD BY 4-BIT - NEC
UPD444008 4M-BIT CMOS FAST SRAM 512K-WORD BY 8-BIT - NEC
UPD444008L 4M-BIT CMOS FAST SRAM 512K-WORD BY 8-BIT - NEC
UPD444012A-X 4M-BIT CMOS STATIC RAM 256K-WORD BY 16-BIT EXTENDED TEMPERATURE OPERATION - NEC
UPD444016 4M-BIT CMOS FAST SRAM 256K-WORD BY 16-BIT - NEC
UPD444016-Y 4M-BIT CMOS FAST SRAM 256K-WORD BY 16-BIT EXTENDED TEMPERATURE OPERATION - NEC
UPD444016L 4M-BIT CMOS FAST SRAM 256K-WORD BY 16-BIT - NEC

@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site. (Privacy Policy & Contact)