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UPD444004L

NEC

4M-BIT CMOS FAST SRAM 1M-WORD BY 4-BIT

DATA SHEET MOS INTEGRATED CIRCUIT µPD444004L 4M-BIT CMOS FAST SRAM 1M-WORD BY 4-BIT Description The µPD444004L is a ...


NEC

UPD444004L

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Description
DATA SHEET MOS INTEGRATED CIRCUIT µPD444004L 4M-BIT CMOS FAST SRAM 1M-WORD BY 4-BIT Description The µPD444004L is a high speed, low power, 4,194,304 bits (1,048,576 words by 4 bits) CMOS static RAM. Operating supply voltage is 3.3 V ± 0.3 V. The µPD444004L is packaged in a 32-pin PLASTIC SOJ. Features 1,048,576 words by 4 bits organization Fast access time : 8, 10, 12 ns (MAX.) Output Enable input for easy application Single +3.3 V power supply Ordering Information Part number Package Access time ns (MAX.) Supply current mA (MAX.) At operating 180 160 150 At standby 5 µPD444004LLE-A8 µPD444004LLE-A10 µPD444004LLE-A12 32-pin PLASTIC SOJ (10.16 mm (400)) 8 10 12 The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. Not all devices/types available in every country. Please check with local NEC representative for availability and additional information. Document No. M14427EJ4V0DS00 (4th edition) Date Published May 2002 NS CP(K) Printed in Japan The mark  shows major revised points. © 1999 µPD444004L Pin Configuration (Marking Side) /××× indicates active low signal. 32-pin PLASTIC SOJ (10.16 mm (400)) A0 A1 A2 A3 A4 /CS I/O1 VCC GND I/O2 /WE A5 A6 A7 A8 A9 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 32 31 30 29 28 27 26 25 24 23 22 21 20 19 18 17 A19 A18 A17 A16 A15 /OE I/O4 GND VCC I/O3 A14 A13 A12 A11 A10 NC A0 - A19 : Address Inputs I/O1 - I/O4 : Data Inputs / O...




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