SD2931-10

SD2931-10 RF power transistor: HF/VHF/UHF N-channel power MOSFETs Datasheet - production data POUT = 150 W min. with 14 dB gain @ 175 MHz Thermally enhanced packaging for lower junction temperatures M174 Epoxy sealed Figure 1. Pin connection 41 Description The SD2931-10 is a gold metalized N-channel MOS field-effect RF power transistor. Being electrically identical to the standard SD2931 MOSFET, it is intended for use in 50 V dc large signal applications up to 230 MHz. The SD2931-10 is mechanical compatible to the SD2931 but offers in addition a better thermal capability (25% lower thermal resistance), representing the best-in-class transistors for ISM applications, where reliability and ruggedness are critical factors. 3 1. Drain 2. Source 2 3. Gate 4. Source Features Gold metalization Excellent thermal stability Common source configuration Order code Marking Table 1. Device summary Base qty. Package SD2931-10W SD2931-10 25 pcs M174 1. For more details please refer to Chapter 11: Marking, packing and shipping specifications. July 2016 This is information on a product in full production. DocID7076 Rev 10 Packaging(1) Plastic tray 1/19 www.st.com Contents Contents SD2931-10 1 Electrical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 1.1 Maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 1.2 Thermal data . . . . . . . . . . . . . . . . . . ...