SD2921

® SD2921 RF POWER TRANSISTORS HF/VHF/UHF N-CHANNEL MOSFETs s s s s GOLD METALLIZATION EXCELLENT THERMAL STABILITY COMMON SOURCE CONFIGURATION POUT = 150W MIN. WITH 12.5 dB gain @175 MHz DESCRIPTION The SD2921 is a gold metallized N-Channel MOS field-effect RF power transistor. The SD2921 is intended for use in 50V dc large signal applications up to 200 MHz M174 epoxy sealed ORDER CODE BRANDING SD2921 SD2921 PIN CONNECTION 1. Drain 2. Source ABSOLUTE MAXIMUM RATINGS (Tcase = 25 oC) Symbol V (BR)DSS V DGR V GS ID P DI SS Tj T STG Parameter Drain Source Voltage Drain-Gate Voltage (R GS = 1M Ω) Gate-Source Voltage Drain Current Power Dissipation Max. O perating Junction Temperature Storage Temperature Value 125 125 ± 20 16 292 200 -65 to 150 3.Gate 4. Source Uni t V V V A W o o C C THERMAL DATA R th (j-c) R th(c -s) Junction-Case T hermal Resistance Case-Heatsink T hermal Resistance ∗ 0.6 0.2 o o C/W C/W * Determined using a flat aluminum or copper heatsink with thermal compound applied (Dow Corning 340 or equivalent). November 1999 1/10 SD2921 ELECTRICAL SPECIFICATION (Tcase = 25 oC) STATIC Symb ol V (BR)DSS I DSS I GSS V GS(Q) V DS( ON) G FS C ISS C OSS C RSS V GS = 0V V GS = 0V V GS = 20V V DS = 10V V GS = 10V V DS = 10V V GS = 0V V GS = 0V V GS = 0V Parameter I DS = 100 mA V DS = 50 V V DS = 0 V I D = 250 mA ID = 10 A ID = 5 A V DS = 50 V V DS = 50 V V DS = 50 V f = 1 MHz f = 1 MHz f = 1 MHz 4 411 198 27 1.0 Min. 125 5 5 5.0 3.0 Typ . Max. Un it V mA µA V V mh...