SD2918

® SD2918 RF POWER TRANSISTORS HF/VHF/UHF N-CHANNEL MOSFETs ADVANCE DATA s s s s GOLD METALLIZATION EXCELLENT THERMAL STABILITY COMMON SOURCE CONFIGURATION Pout = 30 W MIN. WITH 18 dB GAIN @ 30 MHz DESCRIPTION The SD2918 is a gold metallized N-Channel MOS field-effect RF power transistor. It is intended for use in 50 V DC large signal applications up to 200 MHz M113 epoxy sealed ORDER CODE BRANDING SD2918 TSD2918 PIN CONNECTION 1. Drain 2. Source ABSOLUTE MAXIMUM RATINGS (Tcase = 25 oC) Symbol V (BR)DSS V DGR V GS ID P DI SS Tj T STG Parameter Drain Source Voltage Drain-Gate Voltage (R GS = 1 MΩ ) Gate-Source Voltage Drain Current Power Dissipation Max. O perating Junction Temperature Storage T emperature Value 125 125 ± 20 6 175 200 -65 to 150 3.Gate 4. Source Uni t V V V A W o o C C THERMAL DATA R th (j-c) R th(c -s) Junction-Case Thermal Resistance Case-Heatsink T hermal Resistance ∗ 1.0 0.30 o o C/W C/W * Determined using a flat aluminum or copper heatsink with thermal compound applied (Dow Corning 340 or equivalent). November 1999 1/8 SD2918 ELECTRICAL SPECIFICATION (Tcase = 25 oC) STATIC Symb ol V (BR)DSS I DSS I GSS V GS(Q) V DS( ON) g FS C ISS C OSS C RSS V GS = 0V V GS = 0V V GS = 20V V DS = 10V V GS = 10V V DS = 10V V GS = 0V V GS = 0V V GS = 0V Parameter IDS = 10 mA VDS = 50 V V DS = 0 V ID = 10 mA ID = 2.5 A ID = 2.5 A V DS = 50 V V DS = 50 V V DS = 50 V f = 1 MHz f = 1 MHz f = 1 MHz 0.8 58 35.5 7.5 1.0 Min. 125 1.0 1 5.0 5.0 Typ . Max. Un it V mA µ...