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SD2902 Dataheets PDF



Part Number SD2902
Manufacturers ST Microelectronics
Logo ST Microelectronics
Description RF POWER TRANSISTORS HF/VHF/UHF N-CHANNEL MOSFETs
Datasheet SD2902 DatasheetSD2902 Datasheet (PDF)

® SD2902 RF POWER TRANSISTORS HF/VHF/UHF N-CHANNEL MOSFETs s s s s s s s s GOLD METALLIZATION COMMON SOURCE CONFIGURATION 2 - 500 MHz 15 WATTS 28 VOLTS 12.5 dB MIN. AT 400 MHz CLASS A OR AB OPERATION EXCELLENT THERMAL STABILITY M113 epoxy sealed ORDER CODE BRANDING SD2902 SD2902 DESCRIPTION The SD2902 is a gold metallized N-Channel MOS field-effect RF power transistor. It is intended for use in 28 V DC large signal applications up to 500 MHz PIN CONNECTION 1. Drain 2. Source ABSOLUTE MAXIM.

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® SD2902 RF POWER TRANSISTORS HF/VHF/UHF N-CHANNEL MOSFETs s s s s s s s s GOLD METALLIZATION COMMON SOURCE CONFIGURATION 2 - 500 MHz 15 WATTS 28 VOLTS 12.5 dB MIN. AT 400 MHz CLASS A OR AB OPERATION EXCELLENT THERMAL STABILITY M113 epoxy sealed ORDER CODE BRANDING SD2902 SD2902 DESCRIPTION The SD2902 is a gold metallized N-Channel MOS field-effect RF power transistor. It is intended for use in 28 V DC large signal applications up to 500 MHz PIN CONNECTION 1. Drain 2. Source ABSOLUTE MAXIMUM RATINGS (Tcase = 25 oC) Symbol V (BR)DSS V DGR V GS ID P DI SS Tj T STG Parameter Drain Source Voltage Drain-Gate Voltage (R GS = 1M Ω ) Gate-Source Voltage Drain Current Power Dissipation Max. O perating Junction Temperature Storage Temperature Value 65 65 ± 20 2.5 58.3 200 -65 to 150 3.Gate 4. Source Uni t V V V A W o o C C THERMAL DATA R th (j-c) R th(c -s) Junction-Case T hermal Resistance Case-Heatsink T hermal Resistance ∗ 3.0 0.30 o o C/W C/W * Determined using a flat aluminum or copper heatsink with thermal compound applied (Dow Corning 340 or equivalent). November 1999 1/8 SD2902 ELECTRICAL SPECIFICATION (Tcase = 25 oC) STATIC Symb ol V (BR)DSS I DSS I GSS V GS(Q) V DS( ON) g FS C ISS C OSS C RSS V GS = 0V V GS = 0V V GS = 20V V DS = 10V V GS = 10V V DS = 10V V GS = 0V V GS = 0V V GS = 0V Parameter I DS = 15 mA V DS = 28 V V DS = 0 V I D = 30 mA ID = 1.5 A I D = 1.5 A V DS = 28 V V DS = 28 V V DS = 28 V f = 1 MHz f = 1 MHz f = 1 MHz 0.6 23 18 3.5 1.0 Min. 65 1.5 1.0 6.0 1.6 Typ . Max. Un it V mA µA V V mho pF pF pF REF. 1021308K DYNAMIC Symb ol P OUT G PS ηD f = 400 MHz f = 400 MHz f = 400 MHz Parameter V DD = 28 V V DD = 28 V V DD = 28 V V DD = 28 V P out = 15 W P out = 15 W P out = 15 W IDQ = 25 mA I DQ = 25 mA I DQ = 25 mA I DQ = 25 mA Min. 15 12.5 45 10:1 13.5 55 Typ . Max. Un it W dB % VSW R Load f = 400 MHz Mismatch All Angles IMPEDANCE DATA FREQ . 400 MHz Z IN ( Ω ) 2.6 - j 6.5 Z DL ( Ω) 7.8 + j 10 2/8 SD2902 TYPICAL PERFORMANCE Capacitance vs Drain-Source Voltage GC82930 100 GC82 94 0 Maximum Thermal Resistance vs Case Temperature 3.6 f = 1 MHz C, CAPACITANCES (pF) Ciss Coss 10 RTH(j-c) (ºC/W) 3.2 Crss 2.8 1 0 10 20 30 25 45 65 85 Tc, CASE TEMPERATURE (ºC) VDS. DRAIN-SOURCE VOLTAGE (VOLTS) Drain Current vs Gate Voltage GC82950 Gate-Source Voltages vs Case Temperature 5 T = - 20°C VGS, GATE-SOURCE VOLTAGE (NORMALIZED) GC82960 1.05 ID =3 A ID = 2 A ID = 1.25 A ID, DRAIN CURRENT (A) 4 VDS = 10V T = 25°C 1 3 T = 80°C ID = 500 mA 2 0.95 VDD = 10V ID = 25 mA 1 0 5 6 7 8 9 10 0. 9 -25 0 25 50 75 100 VGS, GATE-SOURCE VOLTAGE (VOLTS) Tc, CASE TEMPERATURE (ºC) 3/8 SD2902 TYPICAL PERFORMANCE Output Power vs Input Power GC82970 Output Power vs Input Power GC83000 25 Vdd = 28 V 30 Pout, OUTPUTPOWER (W) Pout, OUTPUT POWER (W) 20 Tc= 25 °C f = 400 MHz 25 I DQ = 25 m A VDD = 28 V f = 400 MHz T = 25º C T = -20ºC 15 IDQ = 25 mA 20 T = 80ºC 15 10 Vdd = 13.5 V 10 5 5 0 0.1 0.4 0.7 1 1.3 1.6 0 0.1 0.4 0.7 1 1.3 1.6 Pin, INPUT POWER (W) Pin, INPUT POW ER (W) Output Power vs Voltage Supply GC82990 Output Power vs Gate Voltage GC82980 25 Pout, OUTPUT POWER (WATTS) Pin = 1. 6 W 20 20 15 10 IDQ = 25 m A f = 400 MHz Pin = .8 W Pout, OUTPUT POWER (W) T = -20° C 15 VDD = 28 V IDQ = 25 mA f = 400 MHz Pin = Constant T = 25°C Pin = .4 W 10 T = 80°C 5 0 13 16 18 21 23 VDD, SUPPLY VOLTAGE (VOLTS) 26 28 5 0 -1 0 1 2 3 4 5 6 7 VGS, GATE-SOURCE VOLTAGE (VOLTS) Power Gain vs Output Power GC83010 Efficiency vs Output Power GC83020 15 70 PG, POWER GAIN (dB) 60 14 EFFICIENCY (%) 50 13 Tc= 25°C f = 400 MHz IDQ = 25 m A 40 Tc= 25 °C f = 400 MHz IDQ = 25 mA 12 30 11 0 5 10 15 20 25 20 0 5 10 15 20 25 Pout, OUTPUT POWER (W) Pout, OUTPUT POWER (W) 4/8 SD2902 400 MHz Test Circuit Schematic 400 MHz Test Circuit Component Part List 5/8 SD2902 400 MHz Test Circuit Photomaster REF. 1022146B Production Test Fixture 6/8 SD2902 M113 (.380 DIA 4/L N/HERM W/FLG) MECHANICAL DATA mm MIN. A B C D E F G H I J K 6.22 3.05 5.59 19.81 18.29 24.64 9.40 0.10 2.16 4.06 TYP. MAX. 5.84 20.83 18.54 24.89 9.78 0.15 2.67 4.57 7.14 6.48 3.30 0.245 0.120 MIN. 0.220 0.780 0.720 0.970 0.370 0.004 0.085 0.160 inch TYP. MAX. 0.230 0.820 0.730 0.980 0.385 0.006 0.105 0.180 0.281 0.255 0.130 DIM. Controlling Dimension: Inches 1010936D 7/8 SD2902 Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critic.


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