MAS3132E

Switching Diodes MAS3132E Silicon epitaxial planar type Unit: mm For high-speed switching circuits ■ Features Two elements are contained in one package, allowing highdensity mounting Short reverse recovery time trr Small terminal capacitance Ct 0.33+0.05 –0.02 3 0.10+0.05 –0.02 (0.40) (0.40) 0.80±0.05 1.20±0.05 5˚ 0 to 0.01 Parameter Reverse voltage Maximum peak reverse voltage Forward current Single Double Peak forward current Single Double Non-repetitive peak forward surge current * Symbol VR VRM IF IFM IFSM Tj Tstg Rating 80 80 100 150 225 340 500 750 150 −55 to +150 Unit V V mA 0.52±0.03 ■ Absolute Maximum Ratings Ta = 25°C 0.15 min. 0.23+0.05 –0.02 1 2 5˚ mA 1: Anode 1 2: Anode 2 3: Cathode 1, 2 SSSMini3-F1 Package Marking Symbol: MU mA Single Double Internal Connection °C °C 3 Junction temperature Storage temperature Note) *: t = 1 s 1 2 ■ Electrical Characteristics Ta = 25°C ± 3°C Parameter Forward voltage Reverse voltage Reverse current Terminal capacitance Reverse recovery time * Symbol VF VR IR Ct trr IR = 100 µA VR = 75 V Conditions IF = 100 mA Min Typ Max 1.2 Unit V V 80 100 2 3 nA pF ns VR = 0 V, f = 1 MHz IF = 10 mA, VR = 6 V Irr = 0.1 IR , RL = 100 Ω Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7031 measuring method for diodes. 2. Absolute frequency of input and output is 100 MHz. 3. *: trr measurement circuit Bias Application Unit N-50BU tr 10% Input Pulse tp t IF trr t Irr = 0.1 IR IF = 1...