Photo Diodes
DL-100-7-KER pin
Position Sensing Photodiodes
Special characteristics:
dual-axis, duo-lateral PSD active area 10 x 10 mm...
Description
DL-100-7-KER pin
Position Sensing Photodiodes
Special characteristics:
dual-axis, duo-lateral PSD active area 10 x 10 mm high position resolution and high linearity
Parameters:
active area Dark current at 10 V Capacitance at 10 V, 100 kHz Spectral responsivity at 633 nm at 850 nm Interelectrode resistance at E = 0 lx Rise time at 10 V, 50 Ω, 865 nm Noise limited resolution at 632 nm, 0.5 µW Position Detection Error 1) at 632 nm Breakdown voltage Package Operating temperature Storage temperature
DL-100-7-KER pin
10 x 10 mm 100 mm2 max. 300 nA typ. 80 nA typ. 75 pF typ. 0,4 A/W typ. 0,62 A/W typ. 12 kΩ typ. 4 µs 0.2 µm +/- 1% typ. 30 V Ceramic with pins
25.4 chip surface
Package 21 (SMD with pins)
2.1± 0.15 10.16 15.24 0.45
1.0 +0.1
Chip: DL-100-7
25.0 ± 0.2
1) measurement conditions: Spot size: 0,5 mm, Scan Interval: 1 mm Wavelength: 633 nm
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Version: 02-09-06
t a d
h s a
t e e
. u 4
m o c
-20 ... +70°C -60 ... +100°C
Active area: (10 x 10) mm2
CATHODE 1
ANODE 2
21.0 ± 0.2
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ANODE 1
CATHODE 2
6.0± 0.5
2.0
Spectral responsivity (A/W)
series-7
0,7
Photo Sensitivity [A/W]
0,6 0,5 0,4 0,3 0,2 0,1 0 200 300 400 500 600 700 800 900 1000 1100
Wavelength [nm]
Handling precautions
Soldering temperature 260°C for max. 10 s. The device must be protected against solder flux vapour. Min. pin - length 2 mm! ESD – protection only small danger for the device. Standard precautionary measures are...
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