DL-100-7-KERSMD

DL-100-7-KER SMD Position Sensing Photodiodes Special characteristics: dual-axis, duo-lateral PSD active area 10 x 10 mm high position resolution and high linearity Parameters: active area Dark current at 10 V Capacitance at 10 V, 100 kHz Spectral responsivity at 633 nm at 850 nm Interelectrode resistance at E = 0 lx Rise time at 10 V, 50 Ω, 865 nm Noise limited resolution at 632 nm, 0.5 µW Position Detection Error 1) at 632 nm Breakdown voltage Package Operating temperature Storage temperature DL-100-7-KER SMD 10 x 10 mm 100 mm2 max. 300 nA typ. 80 nA typ. 75 pF typ. 0,4 A/W typ. 0,62 A/W typ. 12 kΩ typ. 4 µs 0.2 µm chip surface Package 22 (SMD) 2.1± 0.15 1.0 +0.1 10.16 15.24 1.6 (2.54) ANODE 1 1.5 CATHODE 2 0.63 Active area: (10 x 10) mm2 Ceramic S.M. -20 ... +70°C -60 ... +100°C 1) measurement conditions: Spot size: 0,5 mm, Scan Interval: 1 mm Wavelength: 633 nm w w d . wwww.silicon-sensor.com Version: 02-09-06 e e h s a t a . u t4 m o c CATHODE 1 ANODE 2 21.0 ± 0.2 SMD - Kontaktrückseite SMD - back contact 1.6 www.pacific-sensor.com 1.5 25.0 ± 0.2 +/- 1% typ. 30 V Chip: DL-100-7 www.DataSheet4U.com Spectral responsivity (A/W) series-7 0,7 Photo Sensitivity [A/W] 0,6 0,5 0,4 0,3 0,2 0,1 0 200 300 400 500 600 700 800 900 1000 1100 Wavelength [nm] Handling precautions Soldering temperature 260°C for max. 10 s. The device must be protected against solder flux vapour! ESD – protection only small danger for the device. Standard precautionary me...