Y34NB50

www.DataSheet4U.com ® STY34NB50 N - CHANNEL 500V - 0.11Ω - 34 A - Max247 PowerMESH™ MOSFET TYPE ST Y34NB50 s s s s s s s V DSS 500 V R DS(on) < 0.13 Ω ID 34 A TYPICAL RDS(on) = 0.11 Ω EXTREMELY HIGH dv/dt CAPABILITY ± 30V GATE TO SOURCE VOLTAGE RATING 100% AVALANCHE TESTED LOW INTRINSIC CAPACITANCE GATE CHARGE MINIMIZED REDUCED VOLTAGE SPREAD 1 2 3 DESCRIPTION Using the latest high voltage MESH OVERLAY™ process, SGS-Thomson has designed an advanced family of power MOSFETs with outstanding performances. The new patent pending strip layout coupled with the Company’s proprietary edge termination structure, gives the lowest RDS(on) per area, exceptional avalanche and dv/dt capabilities and unrivalled gate charge and switching characteristics. APPLICATIONS s HIGH CURRENT, HIGH SPEED SWITCHING s SWITCH MODE POWER SUPPLY (SMPS) s DC-AC CONVERTER FOR WELDING EQUIPMENT AND UNINTERRUPTABLE POWER SUPPLY AND MOTOR DRIVE ABSOLUTE MAXIMUM RATINGS Symbol V DS VDGR V GS ID ID I DM ( ) P t ot Parameter Drain-source Voltage (V GS = 0) Drain- gate Voltage (R GS = 20 k Ω) Gate-source Voltage Drain Current (continuous) at T c = 25 C Drain Current (continuous) at T c = 100 o C Drain Current (pulsed) Total Dissipation at T c = 25 C Derating Factor dv/dt (1) T stg Tj June 1998 Peak Diode Recovery voltage slope St orage Temperature Max. Operating Junction T emperature o o Max247™ INTERNAL SCHEMATIC DIAGRAM Value 500 500 ± 30 34 21.4 136 450 3.61 4.5 -65 to 150 150 ( 1) ISD ≤34 A, di/d...