Document
PROCESS
Ultra Fast Rectifier
CPD15
Central
TM
500mA Glass Passivated Rectifier Chip
Semiconductor Corp.
PROCESS DETAILS Process Die Size Die Thickness Anode Bonding Pad Area Top Side Metalization Back Side Metalization GLASS PASSIVATED MESA 25 x 25 MILS 9.5 MILS 14.5 x 14.5 MILS Au - 5,000Å Au - 2,000Å
GEOMETRY GROSS DIE PER 4 INCH WAFER 18,080 PRINCIPAL DEVICE TYPES CBRHDU-02 Series
BACKSIDE CATHODE 145 Adams Avenue Hauppauge, NY 11788 USA Tel: (631) 435-1110 Fax: (631) 435-1824 www.centralsemi.com
R2 (19-September 2003)
Central
TM
PROCESS
CPD15
Semiconductor Corp.
Typical Electrical Characteristics
145 Adams Avenue Hauppauge, NY 11788 USA Tel: (631) 435-1110 Fax: (631) 435-1824 www.centralsemi.com
R2 (19-September 2003)
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