TECHNICAL DATA
IW4069UB
Hex Inverter
High-Voltage Silicon-Gate CMOS
The IW4069UB types consist of six inverter circuit...
TECHNICAL DATA
IW4069UB
Hex Inverter
High-Voltage Silicon-Gate CMOS
The IW4069UB types consist of six inverter circuits. These devices are intended for all general-purpose inverter applications where the mediumpower TTL-drive and logic-level-conversion capabilities of circuits such as the IW4049UB Hex Inverter/Buffers are not required. Each of the six inverters is a single stage Operating Voltage Range: 3.0 to 18 V Maximum input current of 1 µA at 18 V over full package-temperature range; 100 nA at 18 V and 25°C Noise margin (over full package temperature range): 0.5 V min @ 5.0 V supply 1.0 V min @ 10.0 V supply 1.5 V min @ 15.0 V supply
ORDERING INFORMATION IW4069UBN Plastic IW4069UBD SOIC TA = -55° to 125° C for all packages
LOGIC DIAGRAM PIN ASSIGNMENT
FUNCTION TABLE
Inputs A Output Y H L
w
w
w
.d
e e h s a t a
. u t4
m o c
L H
PIN 14 =VCC PIN 7 = GND
L – LOW voltage level H – HIGH voltage level
1
www.DataSheet4U.com
IW4069UB
MAXIMUM RATINGS*
Symbol VCC VIN IIN PD Ptot Tstg TL
*
Parameter DC Supply Voltage (Referenced to GND) DC Input Voltage (Referenced to GND) DC Input Current, per Pin Power Dissipation in Still Air, Plastic DIP+ SOIC Package+ Power Dissipation per Output
Transistor Storage Temperature Lead Temperature, 1 mm from Case for 10 Seconds (Plastic DIP or SOIC Package)
Value -0.5 to +20 -0.5 to VCC +0.5 ±10 500 500 100 -65 to +150 260
Unit V V mA mW mW °C °C
Maximum Ratings are those values beyond which damage to the device may occ...