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IW4503B Dataheets PDF



Part Number IW4503B
Manufacturers IK Semiconductor
Logo IK Semiconductor
Description Hex Buffer
Datasheet IW4503B DatasheetIW4503B Datasheet (PDF)

TECHNICAL DATA IW4503B Hex Buffer High-Voltage Silicon-Gate CMOS The IW4503B is a hex noninverting buffer with 3-state outputs having high sink- and source-current capability. Two output ENABLE controls are provided, one of which controls four buffers and the other controls the remaining two buffers. • Operating Voltage Range: 3.0 to 18 V • Maximum input current of 1 µA at 18 V over full package-temperature range; 100 nA at 18 V and 25°C • Noise margin (over full package temperature range): 1..

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TECHNICAL DATA IW4503B Hex Buffer High-Voltage Silicon-Gate CMOS The IW4503B is a hex noninverting buffer with 3-state outputs having high sink- and source-current capability. Two output ENABLE controls are provided, one of which controls four buffers and the other controls the remaining two buffers. • Operating Voltage Range: 3.0 to 18 V • Maximum input current of 1 µA at 18 V over full package-temperature range; 100 nA at 18 V and 25°C • Noise margin (over full package temperature range): 1.0 V min @ 5.0 V supply 2.0 V min @ 10.0 V supply 2.5 V min @ 15.0 V supply ORDERING INFORMATION IW4503BN Plastic IW4503BD SOIC TA = -55° to 125° C for all packages LOGIC DIAGRAM PIN ASSIGNMENT FUNCTION TABLE Inputs Enable 1,Enable 2 L L H Z = high impedance X = don’t care A L H X Output Y L H Z w w w .d e e h s a t a . u t4 m o c PIN 16=VCC PIN 8= GND 1 www.DataSheet4U.com IW4503B MAXIMUM RATINGS* Symbol VCC VIN VOUT IIN PD PD Tstg TL * Parameter DC Supply Voltage (Referenced to GND) DC Input Voltage (Referenced to GND) DC Output Voltage (Referenced to GND) DC Input Current, per Pin Power Dissipation in Still Air, Plastic DIP+ SOIC Package+ Power Dissipation per Output Transistor Storage Temperature Lead Temperature, 1 mm from Case for 10 Seconds (Plastic DIP or SOIC Package) Value -0.5 to +20 -0.5 to VCC +0.5 -0.5 to VCC +0.5 ±10 750 500 100 -65 to +150 260 Unit V V V mA mW mW °C °C Maximum Ratings are those values beyond which damage to the device may occur. Functional operation should be restricted to the Recommended Operating Conditions. +Derating - Plastic DIP: - 10 mW/°C from 65° to 125°C SOIC Package: : - 7 mW/°C from 65° to 125°C RECOMMENDED OPERATING CONDITIONS Symbol VCC VIN, VOUT TA Parameter DC Supply Voltage (Referenced to GND) DC Input Voltage, Output Voltage (Referenced to GND) Operating Temperature, All Package Types Min 3.0 0 -55 Max 18 VCC +125 Unit V V °C This device contains protection circuitry to guard against damage due to high static voltages or electric fields. However, precautions must be taken to avoid applications of any voltage higher than maximum rated voltages to this high-impedance circuit. For proper operation, VIN and VOUT should be constrained to the range GND≤(VIN or VOUT)≤VCC. Unused inputs must always be tied to an appropriate logic voltage level (e.g., either GND or VCC). Unused outputs must be left open. 2 IW4503B DC ELECTRICAL CHARACTERISTICS (Voltages Referenced to GND) VCC Symbol VIH Parameter Minimum High-Level Input Voltage Maximum Low Level Input Voltage Minimum High-Level Output Voltage Maximum Low-Level Output Voltage Maximum Input Leakage Current Maximum Quiescent Supply Current (per Package) Minimum Output Low (Sink) Current Test Conditions VOUT= VCC - 0.5V VOUT= VCC - 1.0 V VOUT= VCC - 1.5V VOUT=0.5 V VOUT=1 V VOUT=1.5 VIN= VCC V 5.0 10 15 5.0 10 15 5.0 10 15 5.0 10 15 18 5.0 10 15 20 5.0 10 15 5.0 5.0 10 15 18 Guaranteed Limit ≥-55°C 3.5 7 11 1.5 3 4 4.95 9.95 14.95 0.05 0.05 0.05 ±.


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