MPQ7091

MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MPQ7091/D Quad Amplifier Transistors PNP Silicon 14 13 12 11 10 9 8 COMPLEMENTARY 1 2 3 4 TYPE B 5 6 7 MPQ7091 MPQ7093* *Motorola Preferred Device MAXIMUM RATINGS Rating Collector – Emitter Voltage Collector – Base Voltage Emitter – Base Voltage Collector Current — Continuous Symbol VCEO VCBO VEBO IC MPQ7091 –150 –150 –5.0 –500 Four Die Equal Power 1700 13.6 3.2 25.6 mW mW/°C Watts mW/°C °C MPQ7093 –250 –250 Unit Vdc Vdc Vdc mAdc 14 1 CASE 646–06, STYLE 1 TO–116 Each Die Total Device Dissipation @ TA = 25°C Derate above 25°C Total Device Dissipation @ TC = 25°C Derate above 25°C Operating and Storage Junction Temperature Range PD 750 5.98 PD 1.25 10 TJ, Tstg –55 to +150 THERMAL CHARACTERISTICS Characteristic Thermal Resistance Coupling Factors Each Die Effective, 4 Die Q1–Q4 or Q2–Q3 Q1–Q2 or Q3–Q4 Junction to Case 100 39 46 5.0 Junction to Ambient 167 73.5 56 10 Unit °C/W °C/W % % ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS Collector – Emitter Breakdown Voltage (IC = –1.0 mAdc, IB = 0) Collector – Base Breakdown Voltage (IC = –100 mAdc, IE = 0) Emitter – Base Breakdown Voltage (IE = –100 mAdc, IC = 0) Collector Cutoff Current (VCB = –120 Vdc, IE = 0) Emitter Cutoff Current (VEB = –3.0 Vdc, IC = 0) MPQ7091 MPQ7093 IEBO — — –100 V(BR)CEO MPQ7091 MPQ7093 V(BR)CBO MPQ7091 MPQ7093 V(BR)EBO –5.0 ICBO — — — — –250 –250 nAdc — — nAdc –1...