SMPS MOSFET
PD - 94445
SMPS MOSFET
Applications l High frequency DC-DC converters
IRFL4315
HEXFET® Power MOSFET RDS(on) max ID 185...
Description
PD - 94445
SMPS MOSFET
Applications l High frequency DC-DC converters
IRFL4315
HEXFET® Power MOSFET RDS(on) max ID 185mΩ@VGS = 10V 2.6A
VDSS
150V
Benefits l Low Gate to Drain Charge to Reduce Switching Losses l Fully Characterized Capacitance Including Effective COSS to Simplify Design, (See App. Note AN1001) l Fully Characterized Avalanche Voltage and Current
S O T -2 2 3
Absolute Maximum Ratings
Parameter
ID @ TA = 25°C ID @ TA = 70°C IDM PD @TA = 25°C VGS dv/dt TJ TSTG Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current Power Dissipation Linear Derating Factor Gate-to-Source Voltage Peak Diode Recovery dv/dt Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds
Max.
2.6 2.1 21 2.8 0.02 ± 30 6.3 -55 to + 150 300 (1.6mm from case )
Units
A W W/°C V V/ns °C
Thermal Resistance
Symbol
RθJA
Parameter
Junction-to-Ambient (PCB Mount, steady state)
Typ.
–––
Max.
45
Units
°C/W
Notes through are on page 8
www.irf.com
1
06/14/02
IRFL4315
Static @ TJ = 25°C (unless otherwise specified)
Parameter Drain-to-Source Breakdown Voltage ∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient RDS(on) Static Drain-to-Source On-Resistance VGS(th) Gate Threshold Voltage V(BR)DSS IDSS IGSS Drain-to-Source Leakage Current Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Min. 150 ––– ––– 3.0 ––– ––– ––– ––– Typ. ––– 0.19 ––– ––– ––– ––– ––– ––– Max. Units Conditions ––– V VGS = 0V, ID = 250µA –...
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