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POWER MOSFET. 2SK2411 Datasheet

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POWER MOSFET. 2SK2411 Datasheet






2SK2411 MOSFET. Datasheet pdf. Equivalent




2SK2411 MOSFET. Datasheet pdf. Equivalent





Part

2SK2411

Description

SWITCHING N-CHANNEL POWER MOSFET



Feature


DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK2411, 2SK2411-Z SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPT ION The 2SK2411 is N-Channel MOS Field Effect Transistor designed for high spe ed switching applications. 3.0 ±0.3 P ACKAGE DIMENSIONS (in millimeter) 10.6 MAX. 10.0 5.9 MIN. 12.7 MIN. 15.5 MAX. 3.6 ±0.2 4.8 MAX. 1.3 ±0.2 FEATURE S • Low On-Resistanc.
Manufacture

NEC Electronics

Datasheet
Download 2SK2411 Datasheet


NEC Electronics 2SK2411

2SK2411; e RDS(on)1 = 40 mΩ MAX. (@ VGS = 10 V, ID = 15 A) RDS(on)2 = 60 mΩ MAX. (@ VGS = 4 V, ID = 15 A) 4 1.3 ±0.2 0.75 ±0.1 2.54 1 2 3 • Low Ciss Ciss = 1 500 pF TYP. • Built-in G-S Gate Prote ction Diodes • High Avalanche Capabil ity Ratings QUALITY GRADE Standard Plea se refer to "Quality grade on NEC Semic onductor Devices" (Document number IEI- 1209) published by NEC Corpora.


NEC Electronics 2SK2411

tion to know the specification of qualit y grade on the devices and its recommen ded applications. 6.0 MAX. 0.5 ±0.2 2.8 ±0.2 2.54 1. Gate 2. Drain 3. Sou rce 4. Fin (Drain) JEDEC: TO-220AB MP- 25 (TO-220) (10.0) 4 4.8 MAX. 8.5 ±0. 2 1.3 ±0.2 ABSOLUTE MAXIMUM RATINGS (TA = 25 ˚C) Drain to Source Voltage G ate to Source Voltage Drain Current (DC ) Drain Current (pulse).


NEC Electronics 2SK2411

* Total Power Dissipation (Tc = 25 ˚C) Total Power Dissipation (TA = 25 ˚C) C hannel Temperature Storage Temperature Single Avalanche Current** Single Avala nche Energy** * PW ≤ 10 µs, Duty Cyc le ≤ 1 % VDSS VGSS ID(DC) ID(pulse) P T1 PT2 Tch Tstg IAS EAS 60 ±20 ±30 ± 120 75 1.5 150 30 90 V V A A W °C A m J W 1.0 ±0.5 1.5 MAX. 1.4 ±0.2 1.0 ±0.3 (2.54) (2.54) 1 2 3 1.1 ±.

Part

2SK2411

Description

SWITCHING N-CHANNEL POWER MOSFET



Feature


DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK2411, 2SK2411-Z SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPT ION The 2SK2411 is N-Channel MOS Field Effect Transistor designed for high spe ed switching applications. 3.0 ±0.3 P ACKAGE DIMENSIONS (in millimeter) 10.6 MAX. 10.0 5.9 MIN. 12.7 MIN. 15.5 MAX. 3.6 ±0.2 4.8 MAX. 1.3 ±0.2 FEATURE S • Low On-Resistanc.
Manufacture

NEC Electronics

Datasheet
Download 2SK2411 Datasheet




 2SK2411
DATA SHEET
MOS FIELD EFFECT TRANSISTOR
2SK2411, 2SK2411-Z
SWITCHING
N-CHANNEL POWER MOS FET
INDUSTRIAL USE
DESCRIPTION
The 2SK2411 is N-Channel MOS Field Effect Transistor designed
for high speed switching applications.
FEATURES
Low On-Resistance
RDS(on)1 = 40 mMAX. (@ VGS = 10 V, ID = 15 A)
RDS(on)2 = 60 mMAX. (@ VGS = 4 V, ID = 15 A)
Low Ciss Ciss = 1500 pF TYP.
Built-in G-S Gate Protection Diodes
High Avalanche Capability Ratings
QUALITY GRADE
Standard
Please refer to "Quality grade on NEC Semiconductor Devices" (Document
number IEI-1209) published by NEC Corporation to know the
specification of quality grade on the devices and its recommended applica-
tions.
ABSOLUTE MAXIMUM RATINGS (TA = 25 ˚C)
Drain to Source Voltage
VDSS
60 V
Gate to Source Voltage
VGSS
±20 V
Drain Current (DC)
ID(DC)
±30 A
Drain Current (pulse)*
ID(pulse)
±120
A
Total Power Dissipation (Tc = 25 ˚C) PT1
75 W
Total Power Dissipation (TA = 25 ˚C) PT2
1.5 W
Channel Temperature
Tch 150 °C
Storage Temperature
Tstg –55 to +150 °C
Single Avalanche Current** IAS 30 A
Single Avalanche Energy**
EAS 90 mJ
* PW 10 µs, Duty Cycle 1 %
** Starting Tch = 25 ˚C, RG = 25 , VGS = 20 V 0
PACKAGE DIMENSIONS
(in millimeter)
10.6 MAX.
10.0
3.6 ±0.2
4.8 MAX.
1.3 ±0.2
4
123
1.3 ±0.2
0.5 ±0.2
0.75 ±0.1
2.54
2.8 ±0.2
2.54
1. Gate
2. Drain
3. Source
4. Fin (Drain)
JEDEC: TO-220AB
MP-25 (TO-220)
(10.0)
4.8 MAX.
1.3 ±0.2
4
1.0 ±0.3
1.4 ±0.2
(2.54) (2.54)
123
(0(.50R.8)R)
0.5 ±0.2
MP-25Z(SURFACE MOUNT TYPE)
Drain
Gate
Body
Diode
Gate Protection
Diode
Source
The information in this document is subject to change without notice.
Document No. D13398EJ1V0DS00 (1st edition)
(Previous No. TC-2492)
Date Published March 1998 N CP(K)
Printed in Japan
©
1994




 2SK2411
2SK2411, 2SK2411-Z
ELECTRICAL CHARACTERISTICS (TA = 25 °C)
CHARACTERISTIC
Drain to Source On-Resistance
Drain to Source On-Resistance
Gate to Source Cutoff Voltage
Forward Transfer Admittance
Drain Leakage Current
Gate to Source Leakage Current
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Gate Charge
Gate to Source Charge
Gate to Drain Charge
Body Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
SYMBOL
RDS(on)1
RDS(on)2
VGS(off)
| yfs |
IDSS
IGSS
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
QG
QGS
QGD
VF(S-D)
trr
Qrr
MIN.
1.0
15
TYP.
31
40
1.5
27
1500
720
190
20
260
130
150
50
5.0
15
1.1
110
320
MAX.
40
60
2.0
10
±10
UNIT
m
m
V
S
µA
µA
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
V
ns
nC
TEST CONDITIONS
VGS = 10 V, ID = 15 A
VGS = 4 V, ID = 15 A
VDS = 10 V, ID = 1 mA
VDS = 10 V, ID = 15 A
VDS = 60 V, VGS = 0
VGS = ±20 V, VDS = 0
VDS = 10 V
VGS = 0
f = 1 MHz
ID = 15 A
VGS(on) = 10 V
VDD = 30 V
RG = 10
ID = 30 A
VDD = 48 V
VGS = 10 V
IF = 30 A, VGS = 0
IF = 30 A, VGS = 0
di/dt = 100 A/µs
Test Circuit 1 Avalanche Capability
D.U.T.
RG = 25
PG
VGS = 20 V 0
50
L
VDD
ID
VDD
IAS BVDSS
VDS
Test Circuit 3 Gate Charge
Starting Tch
Test Circuit 2 Switching Time
D.U.T.
PG. RG
RG = 10
VGS
0
t
t = 1 µs
Duty Cycle 1 %
RL
VDD
VGS
Wave
Form
ID
Wave
Form
VGS
10 %
0
VGS (on)
ID 90 %
10 %
0
ID
td (on)
tr td (off)
90 %
90 %
10 %
tf
ton toff
D.U.T.
IG = 2 mA
PG.
50
RL
VDD
The application circuits and their parameters are for references only and are not intended for use in actual design-in's.
2




 2SK2411
TYPICAL CHARACTERISTICS (TA = 25 °C)
DERATING FACTOR OF FORWARD BIAS
SAFE OPERATING AREA
100
80
60
40
20
0
20 40 60 80 100 120 140 160
Tc - Case Temperature - °C
FORWARD BIAS SAFE OPERATING AREA
1000
PW
100
10
ID (pulse)
= 10
RD(aS t(oVn)GLSim= i1te0dIVD)(DCP) ower
Tc = 25 °C
Single Pulse
100
DissipDa1tCi0onm1Lsmimsited
s
s
1
0.1 1 10 100
VDS - Drain to Source Voltage - V
1000
FORWARD TRANSFER CHARACTERISTICS
Pulsed
VDS = 10 V
100
TA = –25 °C
10 25 °C
125 °C
1
0 5 10
VGS - Gate to Source Voltage - V
2SK2411, 2SK2411-Z
TOTAL POWER DISSIPATION vs.
CASE TEMPERATURE
100
80
60
40
20
0 20 40 60 80 100 120 140 160
Tc - Case Temperature - °C
DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE
100
VGS = 10 V
90
Pulsed
80
70 VGS = 6 V
60
50
40 VGS = 4 V
30
20
10
0 2 4 6 8 10 12
VDS - Drain to Source Voltage - V
3



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