KM718V987

KM736V887 KM718V987 Document Title 256Kx36 & 512Kx18 Synchronous SRAM 256Kx36 & 512Kx18-Bit Synchronous Burst SRAM Revision History Rev. No. 0.0 0.1 History Initial draft Change DC Characteristics. ISB value from 60mA to 90mA at -8 ISB value from 50mA to 80mA at -9 ISB value from 40mA to 70mA at -10 ISB1 value from 10mA to 30mA ISB2 value from 10mA to 30mA 1. Changed tCD from 8.0ns to 8.5ns at -8 2. Changed tCYC from 13.0ns to 12.0ns at -10 3. Changed DC condition at Icc and parameters ICC ; from 300mA to 350mA at -8, from 260mA to 300mA at -9, from 220mA to 260mA at -10, ISB ; from 90mA to 130mA at -8, from 80mA to 120mA at -9, from 70mA to 110mA at -10, 1. ADD 119BGA(7x17 Ball Grid Array Package) . 2. ADD x32 organization. Add VDDQ Supply voltage( 2.5V ) Changed VOL Max value from 0.2V to 0.4V at 2.5V I/O. 1. Final Spec Release. 2. Remove x32 organization. 1. Remove VDDQ supply voltage(2.5V) 1. Changed ICC from 350mA to 330mA at -8. 2. Add bin -7. (tCD 7.5ns). 1. Add VDDQ supply voltage(2.5V) Draft Date April. 10 . 1998 Aug. 31. 1998 Remark Preliminary Preliminary 0.2 Sep. 09. 1998 Preliminary 0.3 Oct. 15. 1998 Preliminary 0.4 0.5 1.0 Dec. 10. 1998 Dec. 23. 1998 Jan. 29. 1999 Preliminary Preliminary Final 2.0 3.0 Feb. 25. 1999 Mar. 30. 1999 Final Final 4.0 May. 13. 1999 Final The attached data sheets are prepared and approved by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the specifications. SAMSUNG Electronics will eval...