2SC4299
Silicon NPN Triple Diffused Planar Transistor (High Voltage Switchihg Transistor) sAbsolute maximum ratings
Symb...
2SC4299
Silicon
NPN Triple Diffused Planar
Transistor (High Voltage Switchihg
Transistor) sAbsolute maximum ratings
Symbol VCBO VCEO VEBO IC IB PC Tj Tstg 2SC4299 900 800 7 3(Pulse6) 1.5 70(Tc=25°C) 150 –55 to +150 (Ta=25°C) Unit V V V A A W °C °C
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Application : Switching
Regulator and General Purpose
(Ta=25°C) 2SC4299 100max 100max 800min 10 to 30 0.5max 1.2max 6typ 50typ V V
16.2
sElectrical Characteristics
Symbol ICBO IEBO V(BR)CEO hFE VCE(sat) VBE(sat) fT COB Conditions VCB=800V VEB=7V IC=10mA VCE=4V, IC=1A IC=1A, IB=0.2A IC=1A, IB=0.2A VCE=12V, IE=–0.3A VCB=10V, f=1MHz
External Dimensions FM100(TO3PF)
0.8±0.2 15.6±0.2 5.5±0.2 3.45 ±0.2 5.5 ø3.3±0.2 1.6
Unit
µA
23.0±0.3
V
9.5±0.2
µA
a b
MHz pF
1.75 2.15 1.05 5.45±0.1 1.5 4.4
+0.2 -0.1
3.3
0.8
sTypical Switching Characteristics (Common Emitter)
VCC (V) 250 RL (Ω) 250 IC (A) 1 VBB1 (V) 10 VBB2 (V) –5 IB1 (A) 0.15 IB2 (A) –0.5 ton (µs) 1max tstg (µs) 5max tf (µs) 1max
5.45±0.1 1.5
0.65 +0.2 -0.1
3.35
B
C
E
Weight : Approx 6.5g a. Type No. b. Lot No.
I C – V CE Characteristics (Typical)
3
V CE (sat),V BE (sat) – I C Temperature Characteristics (Typical)
Collector-Emitter Saturation Voltage V C E (s a t) (V ) Base-Emitter Saturation Voltage V B E (s at) (V) (I C /I B =5)
I C – V BE Temperature Characteristics (Typical)
3 (V C E =4V)
500mA
400mA
300mA
1
p) –55˚C (Case Tem
25˚C (Cas e Temp)
Temp)
V B E (sat) Collector Current I C (A)
Collector Current I C (A)
200mA
2
2
mp)
2 ...