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IL55B Dataheets PDF



Part Number IL55B
Manufacturers Vishay Siliconix
Logo Vishay Siliconix
Description Optocoupler
Datasheet IL55B DatasheetIL55B Datasheet (PDF)

IL55B/ 56B/ MOC8021 Vishay Semiconductors Optocoupler, Photodarlington Output, High Gain Features • High collector-emitter breakdown voltage, 80 V minimum • High isolation resistance, 1011 Ω typical • Standard plastic DIP Package • No base terminal connection for improved common mode interface immunity • Lead-free component • Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC A C NC 1 2 3 6 NC 5 C 4 E i179013 e3 Pb Pb-free Agency Approvals • UL1577, File No. E52744 System Co.

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IL55B/ 56B/ MOC8021 Vishay Semiconductors Optocoupler, Photodarlington Output, High Gain Features • High collector-emitter breakdown voltage, 80 V minimum • High isolation resistance, 1011 Ω typical • Standard plastic DIP Package • No base terminal connection for improved common mode interface immunity • Lead-free component • Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC A C NC 1 2 3 6 NC 5 C 4 E i179013 e3 Pb Pb-free Agency Approvals • UL1577, File No. E52744 System Code H or J, Double Protection • DIN EN 60747-5-2 (VDE0884) DIN EN 60747-5-5 pending Available with Option 1 used to replace reed and mercury relays with advantages of long life, high speed switching and elimination of magnetic fields. Order Information Part IL55B IL56B MOC8021 IL55B-X006 IL55B-X009 IL55B-X007 Remarks CTR > 500 %, DIP-6 CTR > 1000 %, DIP-6 CTR > 1000 %, DIP-6 CTR > 500 %, SMD-6 (option 7) CTR > 500 %, SMD-6 (option 9) CTR > 500 %, SMD-6 (option 7) Description The IL5xB and MOC8021 are optically coupled isolators with a gallium arsenide infrared LED and a silicon photodarlington sensor. Switching can be achieved while maintaining a high degree of isolation between driving and load circuits. These optocouplers can be For additional information on the available options refer to Option Information. Absolute Maximum Ratings Tamb = 25 °C, unless otherwise specified Stresses in excess of the absolute Maximum Ratings can cause permanent damage to the device. Functional operation of the device is not implied at these or any other conditions in excess of those given in the operational sections of this document. Exposure to absolute Maximum Rating for extended periods of the time can adversely affect reliability. Input Parameter Peak reverse voltage Forward continuous current Power dissipation Derate linearly from 55 °C Test condition Symbol VR IF Pdiss Value 3.0 60 100 1.33 Unit V mA mW mW/°C Document Number 83637 Rev. 1.5, 26-Oct-04 www.vishay.com 1 IL55B/ 56B/ MOC8021 Vishay Semiconductors Output Parameter Collector-emitter breakdown voltage Emitter-collector breakdown voltage Collector (load) current Power dissipation Derate linearly from 25 °C Test condition Symbol BVCEO BVECO IC Pdiss Value 80 5.0 125 150 2.0 Unit V V mA mW mW/°C Coupler Parameter Total power dissipation Derate linearly from 25 °C Isolation test voltage (between emitter and detector referred to standard climate 23 °C/50 % RH, DIN 50014) Creepage Clearance Tracking resistance, group III (KC > 600 per VDE 110 § 6, table 3 and DIN 54380/VDE 0330, part 1 Isolation resistance VIO = 500 V, Tamb = 25 °C VIO = 500 V, Tamb = 100 °C Storage temperature Operating temperature Lead soldering time at 260 °C RIO RIO Tstg Tamb Tsld 1012 1011 - 55 to + 150 - 55 to + 100 10 Ω Ω °C °C sec. VISO Test condition Symbol Ptot Value 250 3.3 5300 Unit mW mW/°C VRMS ≥7 ≥7 mm mm Electrical Characteristics Tamb = 25 °C, unless otherwise specified Minimum and maximum values are testing requiremen.


IL56B IL55B BU2902F


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