Document
SHINDENGEN
VX-2 Series Power MOSFET
N-Channel Enhancement type
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2SK2182
(F3F50VX2)
500V 3A
OUTLINE DIMENSIONS
Case : E-pack
Case : FTO-220
(Unit : mm)
FEATURES •œ Input capacitance (Ciss) is small. Especially, input capacitance at 0 biass is small. •œ The static Rds(on) is small. •œ The switching time is fast. APPLICATION
•œ Switching power supply of AC 100V input
•œ High voltage power supply •œ Inverter
RATINGS
•œAbsolute Maximum Ratings • Tc i = 25•Ž•j Item Symbol Conditions Storage Temperature Tstg Channel Temperature Tch Drain-Source Voltage VDSS Gate-Source Voltage VGSS Continuous Drain Current• DC•j i ID Continuous Drain Current• Peak) i IDP Continuous Source Current• DC•j i IS PT Total Power Dissipation Single Pulse Avalanche Current IAS Tch= 25•Ž Dielectric Strength Vdis Terminals to case, AC 1 minute Mounting Torque TOR • i Recommended torque : 0.3 N¥m •j Ratings -55•`150 150 500 •}30 3 9 3 25 3 2 0.5 Unit •Ž V
A W A kV N¥m
Copyright & Copy;2000 Shindengen Electr
VX-2 Series Power MOSFET
●Electrical Characteristics Tc = 25℃ Item Symbol V(BR)DSS Drain-Source Breakdown Voltage IDSS Zero Gate Voltage Drain Current www.datasheet4u.com IGSS Gate-Source Leakage Current Forward Transconductance gfs Static Drain-Source On-state Resistance RDS(ON) Gate Threshold Voltage VTH VSD Source-Drain Diode Forwade Voltage θjc Thermal Resistance Qg Total Gate Charge Ciss Input Capacitance Reverse Transfer Capacitance Crss Output Capacitance Coss Turn-On Time ton toff Turn-Off Time Conditions
ID = 1mA, VGS = 0V VDS = 500V, VGS = 0V VGS = ±30V, VDS = 0V ID = 1.5A, VDS = 10V ID = 1.5A, VGS = 10V ID = 0.3mA, VDS = 10V IS = 1.5A, VGS = 0V junction to case VDD = 400V, VGS = 10V, ID = 3A VDS = 10V, VGS = 0V, f = 1MHZ
2SK2182( F3F50VX2 )
Min. 500 Typ. Max. 250 ±0.1 0.9 2.5 2.1 1.8 3.0 2.3 3.5 1.5 5.0 Unit V μA S Ω V ℃/ W nC pF 80 140 ns
ID = 1.5A, VGS = 10V, RL = 100Ω
15 400 30 90 45 90
Copyright & Copy;2000 Shindengen Electric Mfg.Co.Ltd
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2SK2182
6 Tc = − 55 °C 5
Transfer Characteristics
25 °C 100 °C 150 °C
Drain Current ID [A]
4
3
2
1
0
VDS = 25V pulse test TYP 0 5 10 15 20
Gate-Source Voltage VGS [V]
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2SK2182
10
Static Drain-Source On-state Resistance
Static Drain-Source On-state Resistance RDS(ON) [Ω]
ID = 1.5A
1
VGS = 10V pulse test TYP -50 0 50 100 150
Case Temperature Tc [°C]
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2SK2182
5
Gate Threshold Voltage
Gate Threshold Voltage VTH [V]
4
3
2
1 VDS = 10V ID = 0.3mA TYP -50 0 50 100 150
0
Case Temperature Tc [°C]
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2SK2182
100
Safe Operating Area
10
10 µs
Drain Current ID [A]
100 µs 1 R DS(ON) limit 200 µs
1ms
10ms 0.1 DC Tc = 25°C Single Pulse 0.01 1 10 100 1000
Drain-Source Voltage VDS [V]
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2SK2182
Transient Thermal Impedance
100
10
1
Transient Thermal Impedance θjc(t) [°C/W]
0.1
0.01 10-5 10-3
10-4
10-2
10-1
100
101
102
Time t [s]
2SK2182
1000
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Capacitance
Ciss
Capacitance Ciss Coss Crss [pF]
100
Coss
Crss 10
Tc=25 °C TYP 0 20 40 60 80 100
Drain-Source Voltage VDS [V]
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2SK2182
100
Power Derating
80
Power Derating [%]
60
40
20
0
0
50
100
150
Case Temperature Tc [°C]
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2SK2182
500
Gate Charge Characteristics
20
VDS
Drain-Source Voltage VDS [V]
15 VDD = 400V 200V 300 100V 10 200 VGS
5 100
ID = 3A 0 0 5 10 15 20 25 0
Gate Charge Qg [nC]
Gate-Source Voltage VGS [V]
400
.