MPSA28 / MMBTA28 / PZTA28
Discrete POWER & Signal Technologies
MPSA28
MMBTA28
C
PZTA28
C
E C B
E C B
TO-92
E
SOT...
MPSA28 / MMBTA28 / PZTA28
Discrete POWER & Signal Technologies
MPSA28
MMBTA28
C
PZTA28
C
E C B
E C B
TO-92
E
SOT-23
Mark: 3SS
B
SOT-223
NPN Darlington
Transistor
This device is designed for applications requiring extremely high current gain at collector currents to 500 mA. Sourced from Process 03.
Absolute Maximum Ratings*
Symbol
VCES VCBO VEBO IC TJ, Tstg Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current - Continuous
TA = 25°C unless otherwise noted
Parameter
Value
80 80 12 800 -55 to +150
Units
V V V mA °C
Operating and Storage Junction Temperature Range
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES: 1) These ratings are based on a maximum junction temperature of 150 degrees C. 2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Thermal Characteristics
Symbol
PD RθJC RθJA
TA = 25°C unless otherwise noted
Characteristic
Total Device Dissipation Derate above 25°C Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient MPSA28 625 5.0 83.3 200
Max
*MMBTA28 350 2.8 357 **PZTA28 1,000 8.0 125
Units
mW mW/ °C °C/W °C/W
*Device mounted on FR-4 PCB 1.6" X 1.6" X 0.06." **Device mounted on FR-4 PCB 36 mm X 18 mm X 1.5 mm; mounting pad for the collector lead min. 6 cm2 .
© 1997 Fairchild Semiconductor Corporation
MPSA28 / MMBTA28 / PZTA28
NPN Darlington T...