MPSA27

MPSA27/PZTA27 MPSA27/PZTA27 NPN General Purpose Amplifier This device is designed for applications requiring extremely high current gain at collector currents to 500mA. Sourced from process 03. See MPSA28 for characteristics. 4 3 2 TO-92 1 1. Emitter 2. Base 3. Collector 1 SOT-223 1. Base 2. Collector 3. Emitter Absolute Maximum Ratings* TA=25°C unless otherwise noted Symbol VCES VCBO VEBO IC TJ, Tstg Parameter Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector current - Continuous Operating and Storage Junction Temperature Value 60 60 10 800 -55 ~ +150 Units V V V mA °C * These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. NOTES: 1) These ratings are based on maximum junction temperature of 150 degrees C. 2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. Electrical Characteristics TA=25°C unless otherwise noted Symbol Parameter Test Condition IC = 100µA, VBE = 0 IC = 10µA, IC = 0 IC = 100µA, IC = 0 VCB = 50V, IE = 0 VCE = 50V, VBE = 0 VEB = 10V, IC = 0 IC = 10mA, VCE = 5.0V IC = 100mA, VCE = 5.0V IC = 100mA, IB = 0.1mA IC = 100mA, VCE = 5.0V IC = 10mA, VCE = 5.0V, f = 100MHz 125 10000 10000 1.5 2.0 V V MHz Min. 60 60 10 100 500 100 Typ. Max. Units V V V nA nA nA Off Characteristics Collector-Emitter Breakdown Voltage V(BR)CES V(BR)CBO V(BR)EBO ICBO ICES IEBO hFE VCE(sat) VBE(on) fT Collector-Base Bre...