MPSA27

MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MPSA27/D Darlington Transistor NPN Silicon COLLECTOR 3 BASE 2 MPSA27 1 2 EMITTER 1 3 MAXIMUM RATINGS Rating Collector – Emitter Voltage Emitter – Base Voltage Collector Current — Continuous Total Device Dissipation @ TA = 25°C Derate above 25°C Operating and Storage Junction Temperature Range Symbol VCES VEBO IC PD MPSA25 40 10 500 625 5.0 – 55 to +150 MPSA27 60 Unit Vdc Vdc mAdc mW mW/°C °C CASE 29–04, STYLE 1 TO–92 (TO–226AA) TJ, Tstg THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction to Ambient Symbol RqJA Max 200 Unit °C/W ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS Collector – Emitter Breakdown Voltage (IC = 100 µAdc, VBE = 0) Collector – Base Breakdown Voltage (IC = 100 mAdc, IE = 0) Collector Cutoff Current (VCB = 30 V, IE = 0) (VCB = 40 V, IE = 0) (VCB = 50 V, IE = 0) Collector Cutoff Current (VCE = 30 V, VBE = 0) (VCE = 40 V, VBE = 0) (VCE = 50 V, VBE = 0) Emitter Cutoff Current (VEB = 10 Vdc) V(BR)CES V(BR)CBO ICBO 60 60 — — — — — — 100 Vdc Vdc nAdc ICES — — 500 nAdc IEBO — — 100 nAdc Motorola Small–Signal Transistors, FETs and Diodes Device Data © Motorola, Inc. 1996 1 MPSA27 ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (Continued) Characteristic Symbol Min Typ Max Unit ON CHARACTERISTICS(1) DC Current Gain (IC = 10 mA, VCE = 5.0 V) (IC = 100 mA, VCE = 5.0 V) Collector ...