MPSA26

DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D186 MPSA26; MPSA27 NPN Darlington transistors Product specification Supersedes data of 1997 Apr 17 1999 Apr 27 Philips Semiconductors Product specification NPN Darlington transistors FEATURES High current (max. 500 mA) Low voltage (max. 60 V) High DC current gain (min. 10000). APPLICATIONS High gain amplification. handbook, halfpage MPSA26; MPSA27 PINNING PIN 1 2 3 collector base emitter DESCRIPTION 2 1 DESCRIPTION NPN Darlington transistor in a TO-92; SOT54 plastic package. 1 2 3 TR1 TR2 MAM252 3 Fig.1 Simplified outline (TO-92; SOT54) and symbol. LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL VCBO MPSA26 MPSA27 VCES collector-emitter voltage MPSA26 MPSA27 VEBO IC ICM IB Ptot Tstg Tj Tamb Note 1. Transistor mounted on an FR4 printed-circuit board. emitter-base voltage collector current (DC) peak collector current base current (DC) total power dissipation storage temperature junction temperature operating ambient temperature Tamb ≤ 25 °C; note 1 open collector VBE = 0 − − − − − − − −65 − −65 50 60 10 500 1 100 500 +150 150 +150 V V V mA A mA mW °C °C °C PARAMETER collector-base voltage CONDITIONS open emitter − − 50 60 V V MIN. MAX. UNIT 1999 Apr 27 2 Philips Semiconductors Product specification NPN Darlington transistors THERMAL CHARACTERISTICS SYMBOL Rth j-a Note 1. Transistor mounted on an FR4 printed-circuit board. CHARACTERISTICS Tj = 25 °C unless othe...