Document
DISCRETE SEMICONDUCTORS
DATA SHEET
book, halfpage
M3D186
MPSA26; MPSA27 NPN Darlington transistors
Product specification Supersedes data of 1997 Apr 17 1999 Apr 27
Philips Semiconductors
Product specification
NPN Darlington transistors
FEATURES • High current (max. 500 mA) • Low voltage (max. 60 V) • High DC current gain (min. 10000). APPLICATIONS • High gain amplification.
handbook, halfpage
MPSA26; MPSA27
PINNING PIN 1 2 3 collector base emitter DESCRIPTION
2
1
DESCRIPTION NPN Darlington transistor in a TO-92; SOT54 plastic package.
1
2 3 TR1 TR2
MAM252
3
Fig.1
Simplified outline (TO-92; SOT54) and symbol.
LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL VCBO MPSA26 MPSA27 VCES collector-emitter voltage MPSA26 MPSA27 VEBO IC ICM IB Ptot Tstg Tj Tamb Note 1. Transistor mounted on an FR4 printed-circuit board. emitter-base voltage collector current (DC) peak collector current base current (DC) total power dissipation storage temperature junction temperature operating ambient temperature Tamb ≤ 25 °C; note 1 open collector VBE = 0 − − − − − − − −65 − −65 50 60 10 500 1 100 500 +150 150 +150 V V V mA A mA mW °C °C °C PARAMETER collector-base voltage CONDITIONS open emitter − − 50 60 V V MIN. MAX. UNIT
1999 Apr 27
2
Philips Semiconductors
Product specification
NPN Darlington transistors
THERMAL CHARACTERISTICS SYMBOL Rth j-a Note 1. Transistor mounted on an FR4 printed-circuit board. CHARACTERISTICS Tj = 25 °C unless otherwise specified. SYMBOL ICBO ICBO IEBO hFE VCEsat VBEsat VBEon fT PARAMETER collector cut-off current MPSA26 collector cut-off current MPSA27 emitter cut-off current DC current gain collector-emitter saturation voltage base-emitter saturation voltage base-emitter on-state voltage transition frequency IC = 0; VEB = 10 V IC = 10 mA; VCE = 5 V; see Fig.2 IC = 100 mA; VCE = 5 V; see Fig.2 IC = 100 mA; IB = 0.1 mA IC = 100 mA; IB = 0.1 mA IC = 100 mA; VCE = 5 V IC = 30 mA; VCE = 5 V; f = 100 MHz IE = 0; VCB = 50 V CONDITIONS IE = 0; VCB = 40 V PARAMETER thermal resistance from junction to ambient CONDITIONS note 1
MPSA26; MPSA27
VALUE 250
UNIT K/W
MIN. − − −
TYP. − − −
MAX. 100 100 100 − − 1.5 1.5 2 −
UNIT nA nA nA
10000 − 10000 − − − − 125 − − − 220
V V V MHz
1999 Apr 27
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Philips Semiconductors
Product specification
NPN Darlington transistors
MPSA26; MPSA27
handbook, full pagewidth
80000 hFE
MGD837
60000
40000
20000
0 10−1
1
10
102
IC (mA)
103
VCE = 5 V.
Fig.2 DC current gain; typical values.
1999 Apr 27
4
Philips Semiconductors
Product specification
NPN Darlington transistors
PACKAGE OUTLINE Plastic single-ended leaded (through hole) package; 3 leads
MPSA26; MPSA27
SOT54
c
E d A L b
1
D
2
e1 e
3
b1
L1
0
2.5 scale
5 mm
DIMENSIONS (mm are the original dimensions) UNIT mm A 5.2 5.0 b 0.48 0.40 b1 0.66 0.56 c 0.45 0.40 D 4.8 4.4 d 1.7 1.4 E 4.2 3.6 e 2.54 e1 1.27 L 14.5 12.7 L1(1) 2.5
Note 1. Terminal dimensions within this zone are uncontrolled to allow for flow of plastic and terminal irregularities. OUTLINE VERSION SOT54 REFERENCES IEC JEDEC TO-92 EIAJ SC-43 EUROPEAN PROJECTION ISSUE DATE 97-02-28
1999 Apr 27
5
Philips Semiconductors
Product specification
NPN Darlington transistors
DEFINITIONS Data Sheet Status Objective specification Preliminary specification Product specification Limiting values
MPSA26; MPSA27
This data sheet contains target or goal specifications for product development. This data sheet contains preliminary data; supplementary data may be published later. This data sheet contains final product specifications.
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale.
1999 Apr 27
6
Philips Semiconductors
Product specification
NPN Darlington transistors
NOTES
MPSA26; MPSA27
1999 Apr 27
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