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MPSA27 Dataheets PDF



Part Number MPSA27
Manufacturers NXP
Logo NXP
Description (MPSA26 / MPSA27) NPN Darlington transistors
Datasheet MPSA27 DatasheetMPSA27 Datasheet (PDF)

DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D186 MPSA26; MPSA27 NPN Darlington transistors Product specification Supersedes data of 1997 Apr 17 1999 Apr 27 Philips Semiconductors Product specification NPN Darlington transistors FEATURES • High current (max. 500 mA) • Low voltage (max. 60 V) • High DC current gain (min. 10000). APPLICATIONS • High gain amplification. handbook, halfpage MPSA26; MPSA27 PINNING PIN 1 2 3 collector base emitter DESCRIPTION 2 1 DESCRIPTION NPN Darlingt.

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DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D186 MPSA26; MPSA27 NPN Darlington transistors Product specification Supersedes data of 1997 Apr 17 1999 Apr 27 Philips Semiconductors Product specification NPN Darlington transistors FEATURES • High current (max. 500 mA) • Low voltage (max. 60 V) • High DC current gain (min. 10000). APPLICATIONS • High gain amplification. handbook, halfpage MPSA26; MPSA27 PINNING PIN 1 2 3 collector base emitter DESCRIPTION 2 1 DESCRIPTION NPN Darlington transistor in a TO-92; SOT54 plastic package. 1 2 3 TR1 TR2 MAM252 3 Fig.1 Simplified outline (TO-92; SOT54) and symbol. LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL VCBO MPSA26 MPSA27 VCES collector-emitter voltage MPSA26 MPSA27 VEBO IC ICM IB Ptot Tstg Tj Tamb Note 1. Transistor mounted on an FR4 printed-circuit board. emitter-base voltage collector current (DC) peak collector current base current (DC) total power dissipation storage temperature junction temperature operating ambient temperature Tamb ≤ 25 °C; note 1 open collector VBE = 0 − − − − − − − −65 − −65 50 60 10 500 1 100 500 +150 150 +150 V V V mA A mA mW °C °C °C PARAMETER collector-base voltage CONDITIONS open emitter − − 50 60 V V MIN. MAX. UNIT 1999 Apr 27 2 Philips Semiconductors Product specification NPN Darlington transistors THERMAL CHARACTERISTICS SYMBOL Rth j-a Note 1. Transistor mounted on an FR4 printed-circuit board. CHARACTERISTICS Tj = 25 °C unless otherwise specified. SYMBOL ICBO ICBO IEBO hFE VCEsat VBEsat VBEon fT PARAMETER collector cut-off current MPSA26 collector cut-off current MPSA27 emitter cut-off current DC current gain collector-emitter saturation voltage base-emitter saturation voltage base-emitter on-state voltage transition frequency IC = 0; VEB = 10 V IC = 10 mA; VCE = 5 V; see Fig.2 IC = 100 mA; VCE = 5 V; see Fig.2 IC = 100 mA; IB = 0.1 mA IC = 100 mA; IB = 0.1 mA IC = 100 mA; VCE = 5 V IC = 30 mA; VCE = 5 V; f = 100 MHz IE = 0; VCB = 50 V CONDITIONS IE = 0; VCB = 40 V PARAMETER thermal resistance from junction to ambient CONDITIONS note 1 MPSA26; MPSA27 VALUE 250 UNIT K/W MIN. − − − TYP. − − − MAX. 100 100 100 − − 1.5 1.5 2 − UNIT nA nA nA 10000 − 10000 − − − − 125 − − − 220 V V V MHz 1999 Apr 27 3 Philips Semiconductors Product specification NPN Darlington transistors MPSA26; MPSA27 handbook, full pagewidth 80000 hFE MGD837 60000 40000 20000 0 10−1 1 10 102 IC (mA) 103 VCE = 5 V. Fig.2 DC current gain; typical values. 1999 Apr 27 4 Philips Semiconductors Product specification NPN Darlington transistors PACKAGE OUTLINE Plastic single-ended leaded (through hole) package; 3 leads MPSA26; MPSA27 SOT54 c E d A L b 1 D 2 e1 e 3 b1 L1 0 2.5 scale 5 mm DIMENSIONS (mm are the original dimensions) UNIT mm A 5.2 5.0 b 0.48 0.40 b1 0.66 0.56 c 0.45 0.40 D 4.8 4.4 d 1.7 1.4 E 4.2 3.6 e 2.54 e1 1.27 L 14.5 12.7 L1(1) 2.5 Note 1. Terminal dimensions within this zone are uncontrolled to allow for flow of plastic and terminal irregularities. OUTLINE VERSION SOT54 REFERENCES IEC JEDEC TO-92 EIAJ SC-43 EUROPEAN PROJECTION ISSUE DATE 97-02-28 1999 Apr 27 5 Philips Semiconductors Product specification NPN Darlington transistors DEFINITIONS Data Sheet Status Objective specification Preliminary specification Product specification Limiting values MPSA26; MPSA27 This data sheet contains target or goal specifications for product development. This data sheet contains preliminary data; supplementary data may be published later. This data sheet contains final product specifications. Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. 1999 Apr 27 6 Philips Semiconductors Product specification NPN Darlington transistors NOTES MPSA26; MPSA27 1999 Apr 27 7 Philips Semiconductors – a worldwide company Argentina: see South America Australia: 34 Waterloo Road, NORTH RYDE, NSW 2113, Tel. +61 2 9805 4455, Fax. +61 2 9805 4466 Austria: Computerstr. 6, A-1101 WIEN, P.O. Box 213, Tel. +43 1 60 101 1248, Fax. +43 1 60 101 1210 Belarus: Hotel Minsk Busine.


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