256 bit 16 x 16 or 32 x 8 SERIAL MICROWIRE EEPROM
ST93C06 ST93C06C
256 bit (16 x 16 or 32 x 8) SERIAL MICROWIRE EEPROM
NOT FOR NEW DESIGN
1 MILLION ERASE/WRITE CYCLES, w...
Description
ST93C06 ST93C06C
256 bit (16 x 16 or 32 x 8) SERIAL MICROWIRE EEPROM
NOT FOR NEW DESIGN
1 MILLION ERASE/WRITE CYCLES, with 40 YEARS DATA RETENTION DUAL ORGANIZATION: 16 x 16 or 32 x 8 BYTE/WORD and ENTIRE MEMORY PROGRAMMING INSTRUCTIONS SELF-TIMED PROGRAMMING CYCLE with AUTO-ERASE READY/BUSY SIGNAL DURING PROGRAMMING SINGLE 5V ±10% SUPPLY VOLTAGE SEQUENTIAL READ OPERATION 5ms TYPICAL PROGRAMMING TIME ENHANCED ESD/LATCH UP PERFORMANCES for ”C” VERSION ST93C06 and ST93C06C are replaced by the M93C06 DESCRIPTION The ST93C06 and ST93C06C are 256 bit Electrically Erasable Programmable Memory (EEPROM) fabricated with SGS-THOMSON’s High Endurance Single Polysilicon CMOS technology. In the text the two products are referred to as ST93C06. The memory is divided into either 32 x 8 bit bytes or 16 x 16 bit words. The organization may be selected by a signal applied on the ORG input. The memory is accessed through a serial input (D) and by a set of instructions which includes Read a byte/word, Write a byte/word, Erase a byte/word, Erase All and Write All. ARead instruction loads the address of the first byte/word to be read into an internal address pointer. Table 1. Signal Names
S D Q C ORG VCC VSS June 1997 Chip Select Input Serial Data Input Serial Data Output Serial Clock Organisation Select Supply Voltage Ground
8 1
PSDIP8 (B) 0.4mm Frame
8 1
SO8 (M) 150mil Width
Figure 1. Logic Diagram
VCC
D C S ORG ST93C06 ST93C06C
Q
VSS
AI00816B
1/15
This is information on a product stil...
Similar Datasheet