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P40NF03L

ST Microelectronics

N-CHANNEL Power MOSFET

® STP40NF03L N - CHANNEL 30V - 0.020 Ω - 40A TO-220 STripFET™ POWER MOSFET TYPE STP40NF03L s V DSS 30 V R DS(o n) < ...


ST Microelectronics

P40NF03L

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Description
® STP40NF03L N - CHANNEL 30V - 0.020 Ω - 40A TO-220 STripFET™ POWER MOSFET TYPE STP40NF03L s V DSS 30 V R DS(o n) < 0.022 Ω ID 40 A www.DataSheet4U.com s TYPICAL RDS(on) = 0.020 Ω LOW THRESHOLD DRIVE DESCRIPTION This Power MOSFET is the latest development of STMicroelectronics unique ”Single Feature Size™” strip-based process. The resulting transistor shows extremely high packing density for low on-resistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility. APPLICATIONS s HIGH CURRENT, HIGH SPEED SWITCHING s SOLENOID AND RELAY DRIVERS s MOTOR CONTROL, AUDIO AMPLIFIERS s DC-DC & DC-AC CONVERTERS 3 1 2 TO-220 INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symb ol V DS V DGR VGS ID ID I DM ( ) P tot E AS ( 1 ) T st g Tj Parameter Drain-source Voltage (VGS = 0) Drain- gate Voltage (R GS = 20 k Ω ) G ate-source Voltage Drain Current (continuous) at Tc = 25 oC Drain Current (continuous) at Tc = 100 o C Drain Current (pulsed) T otal Dissipation at Tc = 25 C Derating Factor Single Pulse Avalanche Energy Storage Temperature Max. Operating Junction Temperature o Value 30 30 ± 20 40 28 160 70 0.46 250 -65 to 175 175 ( 1) starting Tj = 25 oC, ID =20A , VDD = 15V Unit V V V A A A W W /o C m/J o o C C () Pulse width limited by safe operating area October 1999 1/8 STP40NF03L THERMAL DATA R thj -case R thj -amb Tl Thermal Resistance Junction-case Max Thermal Resistance Junction-ambient Max Maxi...




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