Power Transistors
2SB1063
Silicon PNP triple diffusion planar type
For high power amplification Complementary to 2SD149...
Power
Transistors
2SB1063
Silicon
PNP triple diffusion planar type
For high power amplification Complementary to 2SD1499 ■ Features
Extremely satisfactory linearity of the forward current transfer ratio hFE Wide safe operation area High transition frequency fT Full-pack package which can be installed to the heat sink with one screw
16.7±0.3
Unit: mm
0.7±0.1
10.0±0.2 5.5±0.2
4.2±0.2
4.2±0.2 2.7±0.2
7.5±0.2
φ 3.1±0.1
Solder Dip (4.0)
1.4±0.1
1.3±0.2 0.5+0.2 –0.1
14.0±0.5
0.8±0.1
■ Absolute Maximum Ratings TC = 25°C
Parameter Collector-base voltage (Emitter open) Collector-emitter voltage (Base open) Emitter-base voltage (Collector open) Collector current Peak collector current Collector power dissipation Ta = 25°C Junction temperature Storage temperature Tj Tstg Symbol VCBO VCEO VEBO IC ICP PC Rating −100 −100 −5 −5 −8 40 2.0 150 −55 to +150 °C °C Unit V V V A A W
2.54±0.3 5.08±0.5
1 2 3
1: Base 2: Collector 3: Emitter EIAJ: SC-67 TO-220F-A1 Package
■ Electrical Characteristics TC = 25°C ± 3°C
Parameter Base-emitter voltage Collector-base cutoff current (Emitter open) Emitter-base cutoff current (Collector open) Forward current transfer ratio Symbol VBE ICBO IEBO hFE1 hFE2 * hFE3 Collector-emitter saturation voltage Transition frequency Collector output capacitance (Common base, input open circuited) VCE(sat) fT Cob Conditions VCE = −5 V, IC = −3 A VCB = −100 V, IE = 0 VEB = −3 V, IC = 0 VCE = −5 V, IC = −20 mA VCE = −5 V, IC = −1 A VCE = −5 V, IC = −3 A...
