MTP10N10E

MOTOROLA Designer's SEMICONDUCTOR TECHNICAL DATA Order this document by MTP10N10E/D TMOS IV Power Field Effect Transistor This advanced “E” series of TMOS power MOSFETs is designed to withstand high energy in the avalanche and commutation modes. These new energy efficient devices also offer drain–to– source diodes with fast recovery times. Designed for low voltage, high speed switching applications in power supplies, converters and PWM motor controls, these devices are particularly well suited for bridge circuits where diode speed and commutating safe operating area are critical, and offer additional safety margin against unexpected voltage transients. Internal Source–to–Drain Diode Designed to Replace External Zener Transient Suppressor — Absorbs High Energy in the Avalanche Mode — Unclamped Inductive Switching (UIS) Energy Capability Specified at 100°C Commutating Safe Operating Area (CSOA) Specified for Use in Half and Full Bridge Circuits Source–to–Drain Diode Recovery Time Comparable to a Discrete Fast Recovery Diode Diode is Characterized for Use in Bridge Circuits ™ Data Sheet MTP10N10E TMOS POWER FETs 10 AMPERES 100 VOLTS RDS(on) = 0.25 OHM N–Channel Enhancement–Mode Silicon Gate ® D G S CASE 221A–06, Style 5 TO–220AB MAXIMUM RATINGS (TC = 25°C unless otherwise noted) Rating Drain–Source Voltage Drain–Gate Voltage (RGS = 1.0 MΩ) Gate–Source Voltage Drain Current — Continuous Drain Current — Pulsed Total Power Dissipation Derate above 25°C Operating ...