PM100RLB060 Datasheet PDF - Mitsubishi Electric Semiconductor

MITSUBISHI PM100RLB060 FLAT-BASE TYPE INSULATED PACKAGE PM100RLB060 FEATURE a) Adopting n...

MITSUBISHI PM100RLB060 FLAT-BASE TYPE INSULATED PACKAGE PM100RLB060 FEATURE a) Adopting new 5th generation IGBT (CSTBT) chip, which performance is improved by 1µm fine rule process. For example, typical Vce(sat)=1.5V @Tj=125°C b) I adopt the over-temperature conservation by Tj detection of CSTBT chip, and error output is possible from all each conservation upper and lower arm of IPM. c) New small package Reduce the package size by 32%, thickness by 22% from S-DASH series. d) Current rating of brake part increased. 50% for the current rating of inverter part. 3φ 100A, 600V Current-sense IGBT type inverter 50A, 600V Current-sense regenerative brake IGBT Monolithic gate drive & protection logic Detection, protection & status indication circuits for, shortcircuit, over-temperature & under-voltage (P-Fo available from upper arm devices) Acoustic noise-less 11kW class inverter application APPLICATION General purpose inverter, servo drives and other motor controls PACKAGE OUTLINES 120 7 19.75 3.25 16 3-2 106 ±0.25 66.5 Dimensions in mm 17 16 3-2 16 3-2 15.25 6-2 2-φ5.5 MOUNTING HOLES 1 1.5 1.5 16 3 4 4 25.75 55 N 35 1 P 5 9 13 19 4 4 B U V W 25 4 4 2.5 19.5 22 7.75 23 4 4 4 4 4 4 4- φ2 1 2-φ2.5 .5 9.5 23 98.25 23 Terminal code 1. 2. 3. 4. 5. 6. 7. 8. 9. 10. VUPC UFO UP VUP1 VVPC VFO VP VVP1 VWPC WFO 11. 12. 13. 14. 15. 16. 17. 18. 19. WP VWP1 VNC VN1 Br UN VN WN Fo 19-s0.5 11.5 27.5 9.5 Apr. 2004 MITSUBISHI...