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2SD2493. D2493 Datasheet

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2SD2493. D2493 Datasheet






D2493 2SD2493. Datasheet pdf. Equivalent




D2493 2SD2493. Datasheet pdf. Equivalent





Part

D2493

Description

2SD2493



Feature


Equivalent circuit C Darlington sAbsol ute maximum ratings (Ta=25°C) Symbol V CBO VCEO VEBO IC IB PC Tj Tstg 2SD2493 110 110 5 6 1 60(Tc=25°C) 150 –55 to +150 Unit V V V A A W °C °C 2SD2493 sElectrical Characteristics Symbol ICB O IEBO V(BR)CEO hFE VCE(sat) VBE(sat) f T COB Conditions VCB=110V VEB=5V IC=30m A VCE=4V, IC=5A IC=5A, IB=5mA IC=5A, IB =5mA VCE=12V, IE=–2A VCB.
Manufacture

Sanken electric

Datasheet
Download D2493 Datasheet


Sanken electric D2493

D2493; =10V, f=1MHz 2SD2493 100max 100max 110mi n 5000min∗ 2.5max 3.0max 60typ 55typ V V MHz pF 20.0min 4.0max 3 1.05 +0.2 - 0.1 5.45±0.1 B C E 5.45±0.1 B (7 0 Ω ) E Silicon NPN Triple Diffused P lanar Transistor (Complement to type 2S B1624) Application : Audio, Series Reg ulator and General Purpose (Ta=25°C) U nit 5.0±0.2 External Dimensions MT-10 0(TO3P) 15.6±0.4 9.6 2.0 1.


Sanken electric D2493

.8 4.8±0.2 2.0±0.1 µA µA 19.9±0.3 V 4.0 a b ø3.2±0.1 2 0.65 +0.2 -0.1 1.4 ∗hFE Rank O(5000 to 12000), P(6500 to 20000), Y(15000 to 30000) s Typical Switching Characteristics (Comm on Emitter) VCC (V) 30 RL (Ω) 6 IC (A ) 5 VBB1 (V) 10 VBB2 (V) –5 IB1 (mA) 5 IB2 (mA) –5 ton (µs) 0.8typ tstg ( µs) 6.2typ tf (µs) 1.1typ Weight : A pprox 6.0g a. Type No. b. Lot No. w.


Sanken electric D2493

ww.DataSheet4U.com I C – V CE Characte ristics (Typical) A 1m V CE ( sat ) I B Characteristics (Typical) Collect or-Emitter Saturation Voltage V C E (s a t) (V ) 3 I C – V BE Temperature C haracteristics (Typical) 6 (V CE =4V) 6 5mA 0. 5m A 0. 4m A 0.3 mA Coll ector Current I C (A) 4 0.2mA Collect or Current I C (A) 2 4 mp) I C =5A p) e Tem 25˚C (Cas –30˚.

Part

D2493

Description

2SD2493



Feature


Equivalent circuit C Darlington sAbsol ute maximum ratings (Ta=25°C) Symbol V CBO VCEO VEBO IC IB PC Tj Tstg 2SD2493 110 110 5 6 1 60(Tc=25°C) 150 –55 to +150 Unit V V V A A W °C °C 2SD2493 sElectrical Characteristics Symbol ICB O IEBO V(BR)CEO hFE VCE(sat) VBE(sat) f T COB Conditions VCB=110V VEB=5V IC=30m A VCE=4V, IC=5A IC=5A, IB=5mA IC=5A, IB =5mA VCE=12V, IE=–2A VCB.
Manufacture

Sanken electric

Datasheet
Download D2493 Datasheet




 D2493
2SD2493Darlington
Equivalent circuit
B
C
(70)
E
Silicon NPN Triple Diffused Planar Transistor (Complement to type 2SB1624)
Application : Audio, Series Regulator and General Purpose
sAbsolute maximum ratings (Ta=25°C) sElectrical Characteristics
(Ta=25°C)
Symbol
2SD2493
Unit
Symbol
Conditions
2SD2493
Unit
VCBO 110 V ICBO
VCB=110V
100max
µA
VCEO 110 V IEBO
VEB=5V
100max
µA
VEBO
5
V V(BR)CEO
IC=30mA
110min
V
IC
6
A hFE
VCE=4V, IC=5A
5000min
IB
1
A VCE(sat) IC=5A, IB=5mA
2.5max
V
PC
60(Tc=25°C)
W
VBE(sat)
IC=5A, IB=5mA
3.0max
V
Tj
150 °C fT
VCE=12V, IE=–2A
60typ
MHz
Tstg
–55 to +150
°C
COB
VCB=10V, f=1MHz
55typ
pF
hFE Rank O(5000 to 12000), P(6500 to 20000), Y(15000 to 30000)
sTypical Switching Characteristics (Common Emitter)
VCC
RL
IC
VBB1
VBB2
IB1
IB2
ton tstg
tf
(V)
() (A)
(V)
(V)
(mA)
(mA)
(µs)
(µs)
(µs)
30 6 5 10 –5 5 –5 0.8typ 6.2typ 1.1typ
External Dimensions MT-100(TO3P)
15.6±0.4
9.6
4.8±0.2
2.0±0.1
a ø3.2±0.1
b
2
3
1.05
+0.2
-0.1
0.65
+0.2
-0.1
5.45±0.1
5.45±0.1
BCE
1.4
Weight : Approx 6.0g
a. Type No.
b. Lot No.
www.DataSheet4U.com
I C– V CE Characteristics (Typical)
6
0.5mA
0.4mA
0.3mA
4
0.2mA
V CE( s a t ) – I B Characteristics (Typical)
3
I C– V BE Temperature Characteristics (Typical)
(VCE=4V)
6
24
IC=5A
21
IB=0.1mA
IC=3A
2
0
02 4 6
Collector-Emitter Voltage VCE(V)
0
0.1
0.5 1
5 10
Base Current IB(mA)
50 100
0
0 1 2 2.5
Base-Emittor Voltage VBE(V)
h FE– I C Characteristics (Typical)
40000
(VCE=4V)
Typ
10000
5000
h FE– I C Temperature Characteristics (Typical)
40000
(VCE=4V)
10000 125˚C
5000
25˚C
θ j-a– t Characteristics
5
1000
500
200
0.02
0.1 0.5 1
Collector Current IC(A)
1000
500
100
5 6 0.02
–30˚C
0.1 0.5 1
Collector Current IC(A)
1
0.5
56 1
5 10
50 100
Time t(ms)
500 1000 2000
f T– I E Characteristics (Typical)
(VCE=12V)
80
Typ
60
Safe Operating Area (Single Pulse)
20
10
5
DC
40
20
0
–0.02
–0.1
–1
Emitter Current IE(A)
1
0.5
Without Heatsink
Natural Cooling
0.1
0.05
–6
35
10
50 100 200
Collector-Emitter Voltage VCE(V)
Pc–Ta Derating
60
40
20
Without Heatsink
3.5
0
0 25 50
75 100 125
Ambient Temperature Ta(˚C)
150
153











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