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TSC2059

Taiwan Semiconductor Company

General Purpose NPN Transistor

TSC2059 General Purpose NPN Transistor Pin assignment: 1. Base 2. Emitter 3. Collector BVCEO = 40V Ic = 50mA VCE (SAT),...


Taiwan Semiconductor Company

TSC2059

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TSC2059 General Purpose NPN Transistor Pin assignment: 1. Base 2. Emitter 3. Collector BVCEO = 40V Ic = 50mA VCE (SAT), = 0.2V(typ.) @Ic / Ib = 500mA / 50mA Features High transition frequency Very low capacitance Small rbb’-Cc and high gain Small NF. Ordering Information Part No. TSC2059CX Packing Package Marking 3E 3kpcs / Reel SOT-23 Absolute Maximum Rating (Ta = 25 oC unless otherwise noted) Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Power Dissipation Operating Junction Temperature Operating Junction and Storage Temperature Range Symbol VCBO VCEO VEBO IC PD TJ TSTG Limit 18V 25V 3 50 225 +150 - 55 to +150 Unit V V V mA mW o o C C Electrical Characteristics Parameter Static Collector-Base Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cutoff Current Emitter Cutoff Current Collector-Emitter Saturation Voltage DC Current Transfer Ratio Transition Frequency Output Capacitance IC = 10uA, IE = 0 IC = 1mA, IB = 0 IE = 10uA, IC = 0 VCB = 10V, IE = 0 VEB = 2V, IC = 0 IC / IB = 20mA / 4mA VCE = 10V, IC = 10mA VCE = 10V, IC= 10mA, f=200MHz VCB = 10V, f=1MHz VCB = 10V, IC= 10mA, f=31.8MHz VCE = 12V, IC= 2mA, f=200MHz, Rg=50ohm NF -5.5 -dB Cob Rbb’-Cc --1.4 8 2.0 15 pF pF BVCBO BVCEO BVEBO ICBO IEBO VCE(SAT)1 hFE fT 25 18 3 ---52 --------1000 ---0.5 0.5 0.5 270 -MHz V V V uA uA V Conditions Symbol Min Typ Max Unit Note : pulse test: pulse width <=380uS, duty cycle <=2%...




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