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TSC2412

Taiwan Semiconductor Company

General Purpose NPN Transistor

TSC2412 General Purpose NPN Transistor Pin assignment: 1. Base 2. Emitter 3. Collector BVCEO = 50V Ic = 150mA VCE (SAT)...


Taiwan Semiconductor Company

TSC2412

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TSC2412 General Purpose NPN Transistor Pin assignment: 1. Base 2. Emitter 3. Collector BVCEO = 50V Ic = 150mA VCE (SAT), = 0.2V(typ.) @Ic / Ib = 50mA / 5mA Features Driver stage of AF amplifier. General purpose switching application Ordering Information Part No. TSC2412CX Packing Package Marking C4 3kpcs / Reel SOT-23 Structure Epitaxial planar type. Complementary to TSA1037CX Absolute Maximum Rating (Ta = 25 oC unless otherwise noted) Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Power Dissipation Operating Junction Temperature Operating Junction and Storage Temperature Range Note: 1. Single pulse, Pw = 380uS, Duty <= 2% Symbol VCBO VCEO VEBO IC PD TJ TSTG Limit 60V 50V 7 150 225 +150 - 55 to +150 Unit V V V mA mW o o C C Electrical Characteristics Ta = 25 oC unless otherwise noted Parameter Static Collector-Base Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cutoff Current Emitter Cutoff Current Collector-Emitter Saturation Voltage DC Current Transfer Ratio Transition Frequency Output Capacitance Conditions IC = 100uA, IE = 0 IC = 1mA, IB = 0 IE = 50uA, IC = 0 VCB = 60V, IE = 0 VEB = 7V, IC = 0 IC / IB = 50mA / 5mA VCE = 6V, IC = 1mA VCE =12V, IC=2mA, f=100MHz VCB = 5V, f=1MHz Symbol Min 60 50 7 ---180 80 -- Typ -----0.2 -180 2 Max ---0.1 0.1 0.4 820 -3.5 Unit V V V uA uA V MHz pF BVCBO BVCEO BVEBO ICBO IEBO VCE(SAT)1 hFE fT Cob Note : pulse test: pulse wid...




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