TSC2411D
General Purpose Dual NPN Transistor
Pin assignment: 6. Collector 1 1. Emitter 1 5. Base 2 2. Base 1 4. Emitter ...
TSC2411D
General Purpose Dual
NPN Transistor
Pin assignment: 6. Collector 1 1. Emitter 1 5. Base 2 2. Base 1 4. Emitter 2 3. Collector 2
BVCEO = 40V Ic = 600mA VCE (SAT), = 0.2V(typ.) @Ic / Ib = 500mA / 50mA
Features
Two TSC2411 chips in a STO-363 package
Transistor elements are independent, eliminating interference Optimal for low voltage operation
Ordering Information
Part No. TSC2411DCU6 Packing 3kpcs / reel Package SOT-363 Marking 1PR
Structure
Epitaxial planar type. Mounting possible with SOT-323 automatic mounting machines. Complementary to TSA1036DCU6
Absolute Maximum Rating (Ta = 25 oC unless otherwise noted)
Parameter
Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Power Dissipation (note) Operating Junction Temperature Operating Junction and Storage Temperature Range Note: 1. 150mW per element must not be exceeded.
Symbol
VCBO VCEO VEBO IC PD TJ TSTG
Limit
60V 40V 6 0.6 200 (total) +150 - 55 to +150
Unit
V V V A mW
o o
C C
Electrical Characteristics (Ta = 25 oC unless otherwise noted)
Parameter
Collector-Base Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cutoff Current Collector-Emitter Saturation Voltage Collector-Emitter Saturation Voltage DC Current Transfer Ratio
Conditions
IC = 100uA, IE = 0 IC = 1mA, IB = 0 IE = 10uA, IC = 0 VCE = 35V, VEB = 0.4V IC / IB = 150mA / 15mA IC / IB = 500mA / 50mA VCE = 1V, IC = 100uA VCE = 1V, IC = 1mA VCE = 1V, IC = 10mA VCE = 1V, I...