NT56V1616A0T

NT56V1616A0T 16Mb: 1Mx16 Synchronous DRAM w w U 4 NT56V1616A0T t DATA SHEET e e 1Mx16 h Synchronous DRAM S a t a REV 1.2 .D w August , 2000 .c m o REV 1.2 , AUG. 2000 1 ©NANYA TECHNOLOGY CORP. NANYA TECHNOLOGY CORP. reserves the right to change Products and Specifications without notice. www.DataSheet4U.com NT56V1616A0T 16Mb: 1Mx16 Synchronous DRAM Revision History Revision 1.2 ( August, 2000 ) l l l Changed data sheet format Changed package dimension format Changed Item Voltage on Any Pin Relative to Vss Voltage on Vcc Supply Relative to Vss Input Leakage Current Ambient Temperature VIN ,VOUT VCC , VCCQ IIL Ta From -0.5 to Vcc +0.5 (V) -0.5 to 4.5 (V) -10 ~ +10 µA 0~65°C To -1.0 to 4.6 (V) -1.0 to 4.6 (V) -5 ~ +5 µA 0~70°C Revision 1.1 ( May, 2000 ) l Add Timing waveform chart Revision 1.0 ( May, 2000 ) l First Version REV 1.2 , AUG. 2000 2 ©NANYA TECHNOLOGY CORP. NANYA TECHNOLOGY CORP. reserves the right to change Products and Specifications without notice. NT56V1616A0T 16Mb: 1Mx16 Synchronous DRAM DESCRIPTION The NTC 16Meg SDRAM is a high-speed CMOS dynamic random-access memory containing 16,777,216 bits. It is internally configured as a dual memory array (512K x 16) with a synchronous interface (all signals are registered on the positive edge of the clock signal, CLK). Each of the two internal banks is organized with 2,048 rows and with either 256 columns by 16 bits. Read and write accesses to the SDRAM are burst oriented; accesses start at a selected loca...