(NE500100 / NE500199) C-Band Medium Power GaAs MESFET
Description
C-BAND MEDIUM POWER GaAs MESFET NE8500100 NE8500199
FEATURES
HIGH OUTPUT POWER: 1 W HIGH LINEAR GAIN: 9.0 dB HIGH EFFICIENCY: 37% (PAE) INDUSTRY STANDARD PACKAGING THIS DEVICE IS ALSO AVAILABLE AS A TWO-CELL CHIP: NE8500100
ABSOLUTE MAXIMUM RATINGS1
(TC = 25 °C unless otherwise noted) SYMBOLS VDS VGD VGS IDS IGS PT TCH TSTG PARAMETERS Drain to Sou...
