NE500199

C-BAND MEDIUM POWER GaAs MESFET NE8500100 NE8500199 FEATURES HIGH OUTPUT POWER: 1 W HIGH LINEAR GAIN: 9.0 dB HIGH EFFICIENCY: 37% (PAE) INDUSTRY STANDARD PACKAGING THIS DEVICE IS ALSO AVAILABLE AS A TWO-CELL CHIP: NE8500100 ABSOLUTE MAXIMUM RATINGS1 (TC = 25 °C unless otherwise noted) SYMBOLS VDS VGD VGS IDS IGS PT TCH TSTG PARAMETERS Drain to Source Voltage Gate to Drain Voltage Gate to Source Voltage Drain Current Gate Current Channel Temperature Storage Temperature UNITS V V V RATINGS 15 -18 -12 IDSS 6.0 6.0 175 -65 to +175 Total Power Dissipation DESCRIPTION The NE8500199 is a medium power GaAs MESFET designed for up to a 1W output stage or as a driver for higher power devices. The device has no internal matching and can be used at frequencies from UHF to 8.5 GHZ. The device is available in the “99” package or in chip form. The chip is a twocell die; bonding both cells delivers the rated performance. The NE850 Series Transistors are manufactured to NEC's stringent quality assurance standards to ensure highest reliability and consistent superior performance. Note: 1. Operation in excess of any one of these parameters may result in permanent damage. ELECTRICAL CHARACTERISTICS (TC PACKAGE OUTLINE SYMBOLS POUT GL Functional Characteristics Power Out at Fixed Input Power Linear Gain ηADD IDS Collector Efficiency Drain Source Current Saturated Drain Current Pinch-off Voltage Transconductance Thermal Resistance w w CHARACTERISTICS .D w PART NUMBER t a S ...