SUV85N03-04P

SUV85N03-04P New Product Vishay Siliconix N-Channel 30-V (D-S) 175_C MOSFET PRODUCT SUMMARY V(BR)DSS (V) 30 FEATURES rDS(on) (W) ID (A)a 85a 85a D TrenchFETr Power MOSFET D 175_C Junction Temperature 0.0043 @ VGS = 10 V 0.007 @ VGS = 4.5 V APPLICATIONS D Secondary Side DC/DC TO-262 D 1 2 3 G G D S S Top View SUV85N03-04P N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 175_C) Pulsed Drain Current Avalanche Current Repetitive Avalanche Energyb Maximum Power Dissipationb Operating Junction and Storage Temperature Range L = 0.1 mH TC = 25_C TA = 25_Cd TC = 25_C TC = 100_C Symbol VDS VGS ID IDM IAR EAR PD TJ, Tstg Limit 30 "20 85a 85a 240 75 280 166c 3.75 -55 to 175 Unit V A mJ W _C THERMAL RESISTANCE RATINGS Parameter PCB Mountd Junction-to-Ambient Junction-to-Case Notes a. Package limited. b. Duty cycle v 1%. c. See SOA curve for voltage derating. d. When mounted on 1” square PCB (FR-4 material). Document Number: 72088 S-22245—Rev. A, 25-Nov-02 www.vishay.com Free Air RthJA RthJC Symbol Limit 40 62.5 0.9 Unit _C/W 1 SUV85N03-04P Vishay Siliconix New Product SPECIFICATIONS (TJ =25_C UNLESS OTHERWISE NOTED) Parameter Static Drain-Source Breakdown Voltage Gate-Threshold Voltage Gate-Body Leakage V(BR)DSS VGS(th) IGSS VDS = 0 V, ID = 250 mA VDS = VGS, ID = 250 mA VDS = 0 V, VGS = "20 V VDS = 24 V, VGS = 0 V Zero Gate Voltage Drain Current IDSS VDS...